Synthesis and thermoelectric properties of Mg2Si1-x Sn x solid solutions by microwave irradiation

被引：8

作者：

Zhou Shu-cai ^{[1
,2
]}

Bai Chen-guang ^{[1
]}

机构：

[1] Chongqing Univ, Coll Mat Sci & Engn, Chongqing 400044, Peoples R China

[2] Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China

来源：

JOURNAL OF CENTRAL SOUTH UNIVERSITY | 2012年 / 19卷 / 09期

关键词：

Mg2Si1-xSnx; thermoelectric material; solid solution; microwave synthesis;

D O I：

10.1007/s11771-012-1291-z

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

In order to reduce the oxidizing and volatilizing caused by Mg element in the traditional methods for synthesizing Mg2Si1-x Sn (x) (x=0.2, 0.4, 0.6, 0.8) solid solutions, microwave irradiation techniques were used in preparing them as thermoelectric materials. Structure and phase composition of the obtained materials were investigated by X-ray diffraction (XRD). The electrical conductivity, Seebeck coefficient and thermal conductivity were measured as a function of temperature from 300 to 750 K. It is found that Mg2Si1-x Sn (x) solid solutions are well formed with excessive content of 5% (molar fraction) Mg from the stoichiometric Mg2Si1-x Sn (x) under microwave irradiation. A maximum dimensionless figure of merit, ZT, of about 0.26 is obtained for Mg2Si1-x Sn (x) solid solutions at about 500 K for x=0.6.

引用

页码：2421 / 2424

页数：4

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