Synthesis and thermoelectric properties of Mg2Si1-x Sn x solid solutions by microwave irradiation

被引:8
作者
Zhou Shu-cai [1 ,2 ]
Bai Chen-guang [1 ]
机构
[1] Chongqing Univ, Coll Mat Sci & Engn, Chongqing 400044, Peoples R China
[2] Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China
关键词
Mg2Si1-xSnx; thermoelectric material; solid solution; microwave synthesis;
D O I
10.1007/s11771-012-1291-z
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
In order to reduce the oxidizing and volatilizing caused by Mg element in the traditional methods for synthesizing Mg2Si1-x Sn (x) (x=0.2, 0.4, 0.6, 0.8) solid solutions, microwave irradiation techniques were used in preparing them as thermoelectric materials. Structure and phase composition of the obtained materials were investigated by X-ray diffraction (XRD). The electrical conductivity, Seebeck coefficient and thermal conductivity were measured as a function of temperature from 300 to 750 K. It is found that Mg2Si1-x Sn (x) solid solutions are well formed with excessive content of 5% (molar fraction) Mg from the stoichiometric Mg2Si1-x Sn (x) under microwave irradiation. A maximum dimensionless figure of merit, ZT, of about 0.26 is obtained for Mg2Si1-x Sn (x) solid solutions at about 500 K for x=0.6.
引用
收藏
页码:2421 / 2424
页数:4
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