Monolayer Graphene Nanoribbon Homojunction Characteristics

被引：10

作者：

Ahmadi, Mohammad Taghi ^{[1
,2
]}

Rahmani, Meisam ^{[1
]}

Ghadiry, Mahdiar ^{[3
]}

Ismail, Razali ^{[1
]}

机构：

[1] Univ Teknol Malaysia, Fac Elect Engn, Skudai 81310, Johor, Malaysia

[2] Urmia Univ, Dept Elect Engn, Orumiyeh 57135, Iran

[3] Islamic Azad Univ, Dept Comp Engn, Arak Branch, Arak 71575, Iran

来源：

SCIENCE OF ADVANCED MATERIALS | 2012年 / 4卷 / 07期

关键词：

Monolayer Graphene Nanoribbon; Homo-Junction Configuration; Schottky Diode; Current-Voltage Characteristic; SCHOTTKY-BARRIER;

D O I：

10.1166/sam.2012.1367

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

One dimensional band structure limit is applied on monolayer graphene nanoribbon homo-junction. The parabolic band energy approximation on graphene nanoribbon in low energy limit is assumed which means carrier movement can be presumed as a ballistic transport. Two graphene nanoribbon with different width are projected as metallic and semiconducting components of a homo-junction schottky diode. Finally analytical model of junction current-voltage (I-V), graphene nanoribbon width effects on carrier transport also physical parameters, such as drain voltage, gate voltage are presented. Comparison study between presented model and conventional diodes indicates smaller effective turn-on voltage of the graphene nanoribbon schottky diode.

引用

页码：753 / 756

页数：4

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