Self-interstitial supersaturation during Ostwald ripening of end-of-range defects in ion-implanted silicon

被引：3
|
作者：
Seibt, M [1 ]
机构：
[1] UNIV GOTTINGEN,INST PHYS 4,D-37073 GOTTINGEN,GERMANY
来源：
RAPID THERMAL AND INTEGRATED PROCESSING V | 1996年 / 429卷
关键词：
D O I：
10.1557/PROC-429-109
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：109 / 114
页数：6
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