X-ray diffraction analysis on the RF-CVD deposited carbon nitride films

The X-ray diffraction (XRD) spectra of carbon nitride films deposited on Si and alloy steel substrates have been studied. The experimental results indicate that beta-C3N4 crystal film is relatively easy to be deposited on the Si wafer with a Si3N4 buffer layer and post-treatment at 800 degrees C helps the films to crystallize. These beta-C3N4 crystals bear a specific orientation relationship with the direction of Si wafer. Seven diffraction peaks for beta-C3N4 and six ones for alpha-C3N4 have been observed for C-N film on the alloy steel substrate. These XRD results match the theoretical calculated lattice constants of beta-C3N4 and alpha-C3N4 pattern. (C) 1997 Elsevier Science Ltd.