Thermally Controlled Vanadium Dioxide Thin Film Microwave Devices

被引:0
作者
Subramanyam, G. [1 ]
Shin, E. [1 ]
Brown, D. [1 ]
Yue, H. [1 ]
机构
[1] Univ Dayton, Dept Elect & Comp Engn, Dayton, OH 45469 USA
来源
2013 IEEE 56TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS) | 2013年
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Vanadium dioxide (VO2) thin films have unique insulator to metal transition above the critical temperature of 68 degrees C. In this study, VO2 thin films were deposited on a sapphire substrate for thermally controllable RF/microwave devices such as switches, limiters and resonators. The selectively deposited VO2 thin film based devices showed similar to 2 k Omega at room temperature and less than 2 Omega at 70 degrees C. These thermally controlled varistors were utilized in shunt as well as series configurations for microwave switching and in resonant structures. Switching devices designed using a VO2 shunt varistor showed good isolation (>20 dB) and low insertion loss (<1 dB) up to 20 GHz. This paper presents two types of shunt varistor devices designed and fabricated on sapphire substrates.
引用
收藏
页码:73 / 76
页数:4
相关论文
共 5 条
[1]   Voltage- and current-activated metal-insulator transition in VO2-based electrical switches: a lifetime operation analysis [J].
Crunteanu, Aurelian ;
Givernaud, Julien ;
Leroy, Jonathan ;
Mardivirin, David ;
Champeaux, Corinne ;
Orlianges, Jean-Christophe ;
Catherinot, Alain ;
Blondy, Pierre .
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2010, 11 (06)
[2]   Microwave Power Limiting Devices Based on the Semiconductor-Metal Transition in Vanadium-Dioxide Thin Films [J].
Givernaud, Julien ;
Crunteanu, Aurelian ;
Orlianges, Jean-Cristophe ;
Pothier, Arnaud ;
Champeaux, Corinne ;
Catherinot, Alain ;
Blondy, Pierre .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2010, 58 (09) :2352-2361
[3]   MILLIMETER-WAVE DIELECTRIC-PROPERTIES OF EPITAXIAL VANADIUM DIOXIDE THIN-FILMS [J].
HOOD, PJ ;
DENATALE, JF .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) :376-381
[4]   VO2 Thin-Film Varistor Based on Metal-Insulator Transition [J].
Kim, Bong-Jun ;
Lee, Yong Wook ;
Choi, Sungyoul ;
Yun, Sun Jin ;
Kim, Hyun-Tak .
IEEE ELECTRON DEVICE LETTERS, 2010, 31 (01) :14-16
[5]   Effect of the substrate on the insulator-metal transition of vanadium dioxide films [J].
Kovacs, Gyoergy J. ;
Buerger, Danilo ;
Skorupa, Ilona ;
Reuther, Helfried ;
Heller, Rene ;
Schmidt, Heidemarie .
JOURNAL OF APPLIED PHYSICS, 2011, 109 (06)