共 5 条
Thermally Controlled Vanadium Dioxide Thin Film Microwave Devices
被引:0
作者:
Subramanyam, G.
[1
]
Shin, E.
[1
]
Brown, D.
[1
]
Yue, H.
[1
]
机构:
[1] Univ Dayton, Dept Elect & Comp Engn, Dayton, OH 45469 USA
来源:
2013 IEEE 56TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS)
|
2013年
关键词:
D O I:
暂无
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Vanadium dioxide (VO2) thin films have unique insulator to metal transition above the critical temperature of 68 degrees C. In this study, VO2 thin films were deposited on a sapphire substrate for thermally controllable RF/microwave devices such as switches, limiters and resonators. The selectively deposited VO2 thin film based devices showed similar to 2 k Omega at room temperature and less than 2 Omega at 70 degrees C. These thermally controlled varistors were utilized in shunt as well as series configurations for microwave switching and in resonant structures. Switching devices designed using a VO2 shunt varistor showed good isolation (>20 dB) and low insertion loss (<1 dB) up to 20 GHz. This paper presents two types of shunt varistor devices designed and fabricated on sapphire substrates.
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页码:73 / 76
页数:4
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