Micro-photoluminescence spectroscopy of hierarchically self-assembled quantum dots

被引:11
作者
Rastelli, A. [1 ]
Kiravittaya, S. [1 ]
Wang, L. [1 ]
Bauer, C. [1 ]
Schmidt, O. G. [1 ]
机构
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
关键词
quantum dots; hierarchical self-assembly; micro-photoluminescence;
D O I
10.1016/j.physe.2005.12.098
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Novel, self-assembled quantum dot (QD) structures suitable for single-dot optical spectroscopy are fabricated by combining III-V molecular beam epitaxy and in situ, atomic layer precise etching. Several growth and etching steps are used to produce lateral InAs/GaAs QD bimolecules and unstrained GaAs/AlGaAs QDs with low surface density (less than or similar to 10(8) cm(-2)). Micro-photoluminescence is used to investigate the ensemble and single-QD properties of GaAs QDs. Single-QD spectra show resolution-limited sharp lines at low excitation and broad "shell-structures" at high excitation intensity. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:29 / 32
页数:4
相关论文
共 21 条
  • [1] Optical spectroscopy on a single InGaAs/GaAs quantum dot in the few-exciton limit
    Findeis, F
    Zrenner, A
    Böhm, G
    Abstreiter, G
    [J]. SOLID STATE COMMUNICATIONS, 2000, 114 (04) : 227 - 230
  • [2] Exciton Rabi oscillation in a single quantum dot
    Kamada, H
    Gotoh, H
    Temmyo, J
    Takagahara, T
    Ando, H
    [J]. PHYSICAL REVIEW LETTERS, 2001, 87 (24) : 246401 - 1
  • [3] Self-assembled nanoholes and lateral QD bi-molecules by molecular beam epitaxy and atomically precise in situ etching
    Kiravittaya, S
    Songmuang, R
    Jin-Phillipp, NY
    Panyakeow, S
    Schmidt, OG
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 258 - 263
  • [4] Photoluminescence linewidth narrowing of InAs/GaAs self-assembled quantum dots
    Kiravittaya, S
    Nakamura, Y
    Schmidt, OG
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4) : 224 - 228
  • [5] Effective-mass theory for hierarchical self-assembly of GaAs/AlxGa1-xAs quantum dots -: art. no. 155301
    Li, SS
    Chang, K
    Xia, JB
    [J]. PHYSICAL REVIEW B, 2005, 71 (15)
  • [6] Dominance of charged excitons in single-quantum-dot photoluminescence spectra -: art. no. 041302
    Lomascolo, M
    Vergine, A
    Johal, TK
    Rinaldi, R
    Passaseo, A
    Cingolani, R
    Patanè, S
    Labardi, M
    Allegrini, M
    Troiani, F
    Molinari, E
    [J]. PHYSICAL REVIEW B, 2002, 66 (04) : 413021 - 413024
  • [7] Quantum computation with quantum dots
    Loss, D
    DiVincenzo, DP
    [J]. PHYSICAL REVIEW A, 1998, 57 (01): : 120 - 126
  • [8] A quantum dot single-photon turnstile device
    Michler, P
    Kiraz, A
    Becher, C
    Schoenfeld, WV
    Petroff, PM
    Zhang, LD
    Hu, E
    Imamoglu, A
    [J]. SCIENCE, 2000, 290 (5500) : 2282 - 2285
  • [9] Nair SV, 2001, PHYS STATUS SOLIDI B, V224, P739, DOI 10.1002/(SICI)1521-3951(200104)224:3<739::AID-PSSB739>3.0.CO
  • [10] 2-Y