Bipolar resistive switching and conduction mechanism of an Al/ZnO/Al-based memristor

被引：44
作者：
Gul, Fatih [1 ]
Efeoglu, Hasan [1 ,2 ]
机构：
[1] Ataturk Univ, Dept Elect & Elect Engn, TR-25240 Erzurum, Turkey
[2] Ataturk Univ, Nanosci & Nanoengn Res & Applicat Ctr, TR-25240 Erzurum, Turkey
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2017年 / 101卷
关键词：
Memristor; Zinc oxide; Bipolar resistive switching; Schottky emission; Oxygen vacancies; MEMORY;
D O I：
10.1016/j.spmi.2016.11.043
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this study, a direct-current reactive sputtered AliZnO/Al-based memristor device was fabricated and its resistive switching (RS) characteristics investigated. The optical and structural properties were confirmed by using UV vis spectrophotometry and x-ray diffraction, respectively. The memristive and resistive switching characteristics were determined using time dependent current voltage (I-V-t) measurements. The typical pinched hysteresis I-V loops of a memristor were observed. In addition, the device showed forming-free, uniform and bipolar RS behavior. The low electric field region exhibited ohmic conduction, while the Schottky emission (SE) was found to be the dominant conduction mechanism in the high electric field region. A weak Poole-Frenkel (PF) emission also appeared. In conclusion, it was suggested that the SE and PF mechanisms were related to the oxygen vacancies in the ZnO. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：172 / 179
页数：8
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