Preparation and Electrical Properties of Bi0.9Nd0.1Fe0.925Mn0.075O3 thin films

被引：0
作者：
Yan Ning [1 ]
Yang Sheng-hong [1 ]
Zhang Yue-li [1 ]
机构：
[1] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
来源：
ADVANCED MATERIALS AND PROCESSES II, PTS 1-3 | 2012年 / 557-559卷
关键词：
BFO thin films; Sol-Gel method; leakage current; ferroelectric; FERROELECTRIC PROPERTIES; BIFEO3;
D O I：
10.4028/www.scientific.net/AMR.557-559.1933
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Pure BiFeO3 (BFO) and Bi0.9Nd0.1Fe0.925Mn0.075O3 (BNFM) thin films were deposited on Pt(111)/Ti/Si02/Si substrate by sol-gel method. X-ray diffraction analysis showed that all the films were single perovskite structure and a phase transition appeared in Nd Mn codoped BiFeO3 thin films. Electrical measurements indicated that the ferroelectric properties of BFO thin films were significantly improved by Nd and Mn codoping. BNFM films exhibit a low leakage current and a good P-E hysteresis loop. The remanent polarization (Pr) value of 74 mu C/cm(2) has been obtained in BNFM films, while the coercive field (Ec) is 184kV/cm.
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页码：1933 / 1936
页数：4
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