Improvement of SiO2/4H-SiC interface properties by electron cyclotron resonance microwave nitrogen-hydrogen mixed plasma post-oxidation annealing

被引：23

作者：

Zhu, Qiaozhi ^{[1
]}

Qin, Fuwen ^{[2
]}

Li, Wenbo ^{[1
]}

Wang, Dejun ^{[1
]}

机构：

[1] Dalian Univ Technol, Sch Elect Sci & Technol, Fac Elect Informat & Elect Engn, Dalian 116024, Peoples R China

[2] Dalian Univ Technol, Minist Educ, State Key Lab Mat Modificat Laser Ion & Electron, Dalian 116024, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 06期

关键词：

SILICON-CARBIDE; NITRIC-OXIDE; BAND-EDGES; 4H-SILICON CARBIDE; STATE DENSITY; MOS DEVICES; NITRIDATION; SPECTROSCOPY; CAPACITORS; SIC/SIO2;

D O I：

10.1063/1.4818141

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We proposed an electron cyclotron resonance microwave nitrogen-hydrogen mixed plasma post-oxidation annealing process for SiO2/4H-SiC interface and investigated its effect on the electrical properties of the interface. The results indicate that this process could significantly reduce the density of interface traps (D-it) without degrading the oxide insulating properties. The best result is achieved for the 10-min annealed sample. The N and H, which are only concentrated at the SiO2/SiC interface, both play roles in reducing the D-it. N is more effective in passivating the shallow interface traps, while H is more effective in passivating the deep interface traps. (C) 2013 AIP Publishing LLC.

引用

页数：4

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