Enhancement of electrical properties of (Gd, V) co-doped BiFeO3 thin films prepared by chemical solution deposition

被引：14

作者：

Kim, Youn-Jang ^{[1
]}

Kim, Jin Won ^{[1
]}

Raghavan, Chinanmbedu Murugesan ^{[1
]}

Oak, Jeong-Jung ^{[1
]}

Kim, Hae Jin ^{[1
]}

Kim, Won-Jeong ^{[1
]}

Kim, Myong Ho ^{[2
]}

Song, Tae Kwon ^{[2
]}

Kim, Sang Su ^{[1
]}

机构：

[1] Changwon Natl Univ, Dept Phys, Chang Won 641773, South Korea

[2] Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 6410773, South Korea

来源：

CERAMICS INTERNATIONAL | 2013年 / 39卷

关键词：

Electrical properties; Ferroelectric properties; Grain size; Perovskites; FERROELECTRIC PROPERTIES; ND;

D O I：

10.1016/j.ceramint.2012.10.061

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Pure BiFeO3 (BFO) and (Bi0.9Gd0.1)(Fe0.975V0.025)O3+delta(BGFVO) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. The improved electrical properties were observed in the BGFVO thin film. The leakage current density of the co-doped BGFVO thin film showed two orders lower than that of the pure BFO, 8.1 x 10(-5) A/cm(2) at 100 kV/cm. The remnant polarization (2P(r)) and the coercive electric field (2E(c)) of the BGFVO thin film were 54 mu C/cm(2) and 1148 kV/cm with applied electric field of 1100 kV/cm at a frequency of 1 kHz, respectively. The 2P(r) values of the BGFVO thin film show the dependence of measurement frequency, and it has been fairly saturated at about 30 kHz. (C) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：S195 / S199

页数：5

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