Combining Physical Resist Modeling and Self-Consistent Field Theory for Pattern Simulation in Directed Self-Assembly

被引:1
|
作者
Reilly, Michael [1 ]
Ginzburg, Valeriy [2 ]
Smith, Mark D. [3 ]
机构
[1] Dow Elect Mat, DSA Prod R&D, Marlborough, MA USA
[2] Dow Chem Co USA, Mat Sci & Engn R&D, Midland, MI USA
[3] KLA Tencor, Proc Analysis Div, Austin, TX USA
关键词
SCFT; DSA; lithography; resist simulation; BLOCK-COPOLYMERS; THIN-FILMS; LITHOGRAPHY;
D O I
10.1117/12.2011639
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this presentation, we describe multi-scale modeling method combining PROLITH lithography simulation with Self-Consistent Field Theory (SCFT) computation of the block copolymer Directed Self-Assembly (DSA). Within this method, we utilize PROLITH to predict the shape of a lithographic feature as function of process conditions. The results of that calculation are then used as input into SCFT simulation to predict the distribution of the matrix and etchable blocks of the DSA polymers (such as PS-b-PDMS or PS-b-PMMA) inside that feature. This method is applied to simple cases (e. g., rectangular trench and cylindrical contact hole), and the self-assembly of various polymers is investigated as a function of their compositions. The new tool could therefore be applied to rapidly design and screen lithographic process conditions together with polymers used to shrink or rectify the features within the DSA technology.
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页数:9
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