A High-Frequency Transconductance Method for Characterization of High-κ Border Traps in III-V MOSFETs

被引：73

作者：

Johansson, Sofia ^{[1
]}

Berg, Martin ^{[2
]}

Persson, Karl-Magnus ^{[2
]}

Lind, Erik ^{[2
]}

机构：

[1] Lund Univ, Div Solid State Phys, S-22100 Lund, Sweden

[2] Lund Univ, Dept Elect & Informat Technol, S-22100 Lund, Sweden

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 02期

基金：

瑞典研究理事会;

关键词：

Al2O3; border traps; frequency; HfO2; high-k; InAs; InGaAs; interface traps; metal-oxide-semiconductor field-effect transistor (MOSFET); nanowire (NW); transconductance;

D O I：

10.1109/TED.2012.2231867

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel method that reveals the spatial distribution of border traps in III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) is presented. The increase in transconductance with frequency is explored in a very wide frequency range (1 Hz-70 GHz) and a distributed RC network is used to model the oxide and trap capacitances. An evaluation of vertical InAs nanowire MOSFETs and surface-channel InGaAs MOSFETs with Al2O3/HfO2 high-kappa gate dielectric shows a deep border-trap density of about 10(20) cm(-3) eV(-1) and a near-interfacial trap density of about 10(21) cm(-3) eV(-1). The latter causes an almost steplike increase in transconductance at 1-10 GHz. This demonstrates the importance of high-frequency characterization of high-kappa di-electrics in III-V MOSFETs.

引用

页码：776 / 781

页数：6

共 15 条

[1]

Brammertz G., 2009, APPL PHYS LETT, V95

[2] A Combined Interface and Border Trap Model for High-Mobility Substrate Metal-Oxide-Semiconductor Devices Applied to In0.53Ga0.47As and InP Capacitors [J].

Brammertz, Guy ;

Alian, Alireza ;

Lin, Dennis Han-Chung ;

Meuris, Marc ;

Caymax, Matty ;

Wang, W. -E. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (11) :3890-3897

[3] Nanometre-scale electronics with III-V compound semiconductors [J].

del Alamo, Jesus A. .

NATURE, 2011, 479 (7373) :317-323

[4] High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET [J].

Egard, Mikael ;

Ohlsson, Lars ;

Arlelid, Mats ;

Persson, Karl-Magnus ;

Borg, B. Mattias ;

Lenrick, Filip ;

Wallenberg, Reine ;

Lind, Erik ;

Wernersson, Lars-Erik .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (03) :369-371

[5] RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates [J].

Johansson, Sofia ;

Egard, Mikael ;

Ghalamestani, Sepideh Gorji ;

Borg, B. Mattias ;

Berg, Martin ;

Wernersson, Lars-Erik ;

Lind, Erik .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2011, 59 (10) :2733-2738

[6] A simple and analytical parameter-extraction method of a microwave MOSFET [J].

Kwon, I ;

Je, M ;

Lee, K ;

Shin, H .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2002, 50 (06) :1503-1509

[7] High-Performance Inverted In0.53Ga0.47As MOSHEMTs on a GaAs Substrate With Regrown Source/Drain by MOCVD [J].

Li, Qiang ;

Zhou, Xiuju ;

Tang, Chak Wah ;

Lau, Kei May .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (09) :1246-1248

[8]

Persson K.-M., 2012, P 70 ANN DRC, P195

[9]

Radosavljevic M., 2009, IEEE Conference Proceedings of International Electron Devices Meeting (IEDM), P1

[10] High dielectric constant oxides [J].

Robertson, J .

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2004, 28 (03) :265-291

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