A High-Frequency Transconductance Method for Characterization of High-κ Border Traps in III-V MOSFETs

被引：72
作者：
Johansson, Sofia [1 ]
Berg, Martin [2 ]
Persson, Karl-Magnus [2 ]
Lind, Erik [2 ]
机构：
[1] Lund Univ, Div Solid State Phys, S-22100 Lund, Sweden
[2] Lund Univ, Dept Elect & Informat Technol, S-22100 Lund, Sweden
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 02期
基金：
瑞典研究理事会;
关键词：
Al2O3; border traps; frequency; HfO2; high-k; InAs; InGaAs; interface traps; metal-oxide-semiconductor field-effect transistor (MOSFET); nanowire (NW); transconductance;
D O I：
10.1109/TED.2012.2231867
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel method that reveals the spatial distribution of border traps in III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) is presented. The increase in transconductance with frequency is explored in a very wide frequency range (1 Hz-70 GHz) and a distributed RC network is used to model the oxide and trap capacitances. An evaluation of vertical InAs nanowire MOSFETs and surface-channel InGaAs MOSFETs with Al2O3/HfO2 high-kappa gate dielectric shows a deep border-trap density of about 10(20) cm(-3) eV(-1) and a near-interfacial trap density of about 10(21) cm(-3) eV(-1). The latter causes an almost steplike increase in transconductance at 1-10 GHz. This demonstrates the importance of high-frequency characterization of high-kappa di-electrics in III-V MOSFETs.
引用
收藏
页码：776 / 781
页数：6
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