RF Passive Components Based on Aluminum Nitride Cross-Sectional Lame-Mode MEMS Resonators

被引:46
作者
Cassella, Cristian [1 ]
Chen, Guofeng [1 ]
Qian, Zhenyun [1 ]
Hummel, Gwendolyn [1 ]
Rinaldi, Matteo [1 ]
机构
[1] Northeastern Univ, Boston, MA 02115 USA
关键词
Aluminum Nitride (AlN); contour-mode resonators (CMRs); film-bulk-acoustic-resonators (FBARs); filters; k(t)(2); MEMS; piezoelectric; resonators; transformers; CIRCUIT; FBAR;
D O I
10.1109/TED.2016.2621660
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a new class of monolithic integrated RF passive components based on the recently developed aluminum nitride (AlN) MEMS cross-sectional Lame-mode resonator (CLMR) technology. First, we experimentally demonstrate a 920-MHz CLMR showing the values of electromechanical coupling coefficient (k(t)(2)) and quality factor (Q(load)) in excess of 6.2% and 1750, respectively. To the best our knowledge, the resulting figureofmerit (= Q . k(t)(2)), in excess of 108, is the highest ever reported for AlN-based piezoelectric resonators using interdigitated metallic electrodes (IDTs) and operating in the same frequency range. Second, we report the measured performance of an 870-MHz ladder filter, synthesized using three degenerate CLMRs. This device shows the values of fractional bandwidth (BW3dB) in excess of 3.8% and an insertion loss of similar to 1.5 dB. Finally, we report the performance of the first piezoelectric transformer (PT) based on the CLMR technology. This device, dubbed "cross-sectional Lame-mode transformer," exploits the high-k(t)(2) of the CLMR technology to achieve high values of open-circuit voltage-gains (G(v)) in excess of 39. To the best of our knowledge, such a high G(v)-value is the highest ever reported for MEMS-based PTs operating in the microwave frequency range.
引用
收藏
页码:237 / 243
页数:7
相关论文
共 19 条