Alternating Be and C doping for strain compensated GaAs/AlAs distributed Bragg reflectors

被引：4
|
作者：
Mazuelas, A
Hey, R
Jenichen, B
Grahn, HT
机构：
[1] Paul-Drude-Inst. F. F., D-10117 Berlin
来源：
APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 16期
关键词：
D O I：
10.1063/1.118952
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate a new type of strain compensated, p-type distributed Bragg reflector (DBR) using alternating doping of Be in GaAs and C in AlAs with carbon concentrations as high as 2x10(20) Cm-3. These DBRs exhibit simultaneously a high crystalline quality, an excellent surface morphology, and no misfit dislocations, which cannot be achieved in undoped or Be-doped DBRs. The absolute optical reflectivity is as high as in the undoped DBR. The differential resistance of these structures is comparable to best reported values in Be-doped DBRs. (C) 1997 American Institute of Physics.
引用
收藏
页码：2088 / 2090
页数：3
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