Reliability evaluation of high power AlGaN/GaN HEMTs on SiC substrate

被引：1

作者：

Kim, H ^{[1
]}

Tilak, V ^{[1
]}

Green, BM ^{[1
]}

Smart, JA ^{[1
]}

Schaff, WJ ^{[1
]}

Shealy, JR ^{[1
]}

Eastman, LF ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14850 USA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2001年 / 188卷 / 01期

关键词：

D O I：

10.1002/1521-396X(200111)188:1<203::AID-PSSA203>3.3.CO;2-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Undoped AlGaN/GaN HEMTs grown on SiC substrates have recently demonstrated record output power density of 10.7 W/mm (cw) and total output power of 10 W at 10 GHz (L. F. EASTMAN, Joint ONR/MURI Review (5/15-16, 2001), CA (USA) [1]). In this paper, we present the results of reliability tests performed on undoped AlGaN/GaN HEMTs on SiC under dc and rf stress conditions. Undoped AlGaN/GaN HEWS on SiC substrates have been submitted to on-wafer dc and rf stress conditions at a room temperature and the degradation in device performance induced by hot electron and thermal effects have been observed.

引用

页码：203 / 206

页数：4

共 6 条

[1]

EASTMAN LF, 2001, JOINT ONR MURI REV

[2]

HASEGAWA H, 1996, IEEE MTT S, P46

[3]

Hwang JCM, 1995, GAAS IC SYMPOSIUM TECHNICAL DIGEST 1995 - 17TH ANNUAL, P81, DOI 10.1109/GAAS.1995.528966

[4] Degradation characteristics of AlGaN/GaN high electron mobility transistors [J].

Kim, H ;

Tilak, V ;

Green, BM ;

Cha, HY ;

Smart, JA ;

Shealy, JR ;

Eastman, LF .

39TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2001, 2001, :214-218

[5] GaN microwave electronics [J].

Mishra, UK ;

Wu, YF ;

Keller, BP ;

Keller, S ;

Denbaars, SP .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (06) :756-761

[6]

TILAK V, UNPUB IEEE ELECT DEV

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