High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures

被引：338
|
作者：
Mudd, Garry W. [1 ]
Svatek, Simon A. [1 ]
Hague, Lee [2 ]
Makarovsky, Oleg [1 ]
Kudrynskyi, Zakhar R. [1 ]
Mellor, Christopher J. [1 ]
Beton, Peter H. [1 ]
Eaves, Laurence [1 ]
Novoselov, Kostya S. [2 ]
Kovalyuk, Zakhar D. [3 ]
Vdovin, Evgeny E. [1 ,4 ]
Marsden, Alex J. [5 ]
Wilson, Neil R. [5 ]
Patane, Amalia [1 ]
机构：
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] Univ Manchester, Sch Phys & Astron, Oxford M13 9PL, England
[3] Natl Acad Sci Ukraine, Inst Problems Mat Sci, UA-58001 Chernovtsy, Ukraine
[4] Inst Microelect Technol RAS, Chernogolovka 142432, Russia
[5] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
来源：
ADVANCED MATERIALS | 2015年 / 27卷 / 25期
基金：
英国工程与自然科学研究理事会;
关键词：
graphene; indium selenide; photoconductivity; van der Waals crystals; DIRAC FERMIONS; THIN;
D O I：
10.1002/adma.201500889
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures is achieved by exploiting the broad-band transparency of graphene, the direct bandgap of InSe, and the favorable band line up of InSe with graphene. The photoresponsivity exceeds that for other van der Waals heterostructures and the spectral response extends from the near-infrared to the visible spectrum.
引用
收藏
页码：3760 / 3766
页数：7
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