Improved Characterization and Accurate Modelling of Drain Current Derivatives of InP Based High Electron Mobility Transistors Devices

被引：1

作者：

Asif, Muhammad ^{[1
,2
,3
]}

Xi, Wang ^{[1
,2
]}

Hua, Zhao ^{[1
,2
]}

Peng, Ding ^{[1
,2
]}

Jan, Saeedullah ^{[4
]}

Zhi, Jin ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Qurtuba Univ Sci & IT, Dept Elect Engn, Kpk 29050, Pakistan

[4] Islamia Coll Peshawar, Dept Phys, Kpk 25120, Pakistan

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2019年 / 19卷 / 07期

基金：

中国国家自然科学基金;

关键词：

InP Based HEMT; Drain Current; Transconductance; Non-Linear Model; HEMT;

D O I：

10.1166/jnn.2019.16317

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

InP based HEMTs are of great importance, due to their enormous potential in a high-speed modern microwave circuit, power amplifier, and low noise amplifier applications. Therefore, an accurate non-linear equivalent circuit model of HEMTs is very important for an accurate circuit design. This paper presents improved characterization and accurate modelling of drain current derivatives of InP based HEMTs devices. The proposed model is simple, easy to extract, and suitable for implementation in simulation tools. The psi function is extended to increase the flexibility of the proposed model. A gate-drain dependent current source is added to increase the S-parameter fitting. A one-dimensional intrinsic multi-bias capacitances model is introduced to avoid convergence failure. The fitting results of the I-V characteristics and its high order derivatives show high accuracy. In addition, S-parameters and Pout for the proposed model are compared with the original Angelov model. The proposed model shows better accuracy.

引用

页码：3887 / 3892

页数：6

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