Anomalous lattice expansion of coherently strained SrTiO3 thin films grown on Si(001) by kinetically controlled sequential deposition -: art. no. 024112

被引:55
作者
Woicik, JC [1 ]
Li, H
Zschack, P
Karapetrova, E
Ryan, P
Ashman, CR
Hellberg, CS
机构
[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA
[2] Motorola Labs, Embedded Syst & Phys Sci Lab, Tempe, AZ 85284 USA
[3] Univ Illinois, Argonne Natl Lab, APS UNICAT, Argonne, IL 60439 USA
[4] Ames Lab, Ames, IA 50011 USA
[5] USN, Res Lab, Ctr Computat Mat Sci, Washington, DC 20375 USA
来源
PHYSICAL REVIEW B | 2006年 / 73卷 / 02期
关键词
D O I
10.1103/PhysRevB.73.024112
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
X-ray diffraction has been used to study the epitaxy and lattice expansion of SrTiO3 thin films grown coherently on Si(001) by kinetically controlled sequential deposition. The coherent growth of SrTiO3 on Si produces films with greater in-plane compressive strain than previously attained, -1.66%. The measured expansion of the out-of-plane lattice constant exceeds the prediction of the bulk elastic constants of SrTiO3 by nearly 100%. This expansion agrees with recent theoretical predictions and experimental findings of room-temperature ferroelectricity in SrTiO3 films under epitaxial mismatch strain. Our first principles density functional calculations determine an energetically favorable interfacial-defect and surface-charge structure that allows the ferroelectric polarization in these ultrathin films.
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页数:5
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共 31 条
[1]   Ferroelectricity at the nanoscale: Local polarization in oxide thin films and heterostructures [J].
Ahn, CH ;
Rabe, KM ;
Triscone, JM .
SCIENCE, 2004, 303 (5657) :488-491
[2]   Tunability of the dielectric response of epitaxially strained SrTiO3 from first principles -: art. no. 024102 [J].
Antons, A ;
Neaton, JB ;
Rabe, KM ;
Vanderbilt, D .
PHYSICAL REVIEW B, 2005, 71 (02)
[3]   The physics of ferroelectric memories [J].
Auciello, O ;
Scott, JF ;
Ramesh, R .
PHYSICS TODAY, 1998, 51 (07) :22-27
[4]   ELASTIC CONSTANTS OF STRONTIUM TITANATE [J].
BELL, RO ;
RUPPRECHT, G .
PHYSICAL REVIEW, 1963, 129 (01) :90-&
[5]   Band discontinuities at epitaxial SrTiO3/Si(001) heterojunctions [J].
Chambers, SA ;
Liang, Y ;
Yu, Z ;
Droopad, R ;
Ramdani, J ;
Eisenbeiser, K .
APPLIED PHYSICS LETTERS, 2000, 77 (11) :1662-1664
[6]   Enhancement of ferroelectricity in strained BaTiO3 thin films [J].
Choi, KJ ;
Biegalski, M ;
Li, YL ;
Sharan, A ;
Schubert, J ;
Uecker, R ;
Reiche, P ;
Chen, YB ;
Pan, XQ ;
Gopalan, V ;
Chen, LQ ;
Schlom, DG ;
Eom, CB .
SCIENCE, 2004, 306 (5698) :1005-1009
[7]   ORIGIN OF FERROELECTRICITY IN PEROVSKITE OXIDES [J].
COHEN, RE .
NATURE, 1992, 358 (6382) :136-138
[8]   Depolarization corrections to the coercive field in thin-film ferroelectrics [J].
Dawber, M ;
Chandra, P ;
Littlewood, PB ;
Scott, JF .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (24) :L393-L398
[9]   Ferroelectricity in ultrathin perovskite films [J].
Fong, DD ;
Stephenson, GB ;
Streiffer, SK ;
Eastman, JA ;
Auciello, O ;
Fuoss, PH ;
Thompson, C .
SCIENCE, 2004, 304 (5677) :1650-1653
[10]   The interface between silicon and a high-k oxide [J].
Först, CJ ;
Ashman, CR ;
Schwarz, K ;
Blöchl, PE .
NATURE, 2004, 427 (6969) :53-56