Creating a Stable Oxide at the Surface of Black Phosphorus

被引:316
作者
Edmonds, M. T. [1 ,5 ]
Tadich, A. [2 ,5 ]
Carvalho, A. [3 ,4 ]
Ziletti, A. [6 ]
O'Donnell, K. M. [7 ]
Koenig, S. P. [3 ,4 ]
Coker, D. F. [6 ]
Oezyilmaz, B. [3 ,4 ]
Castro Neto, A. H. [3 ,4 ,8 ]
Fuhrer, M. S. [1 ,9 ]
机构
[1] Monash Univ, Sch Phys & Astron, Clayton, Vic 3800, Australia
[2] Australian Synchrotron, Clayton, Vic 3183, Australia
[3] Natl Univ Singapore, Ctr Adv Mat 2D, Singapore 117546, Singapore
[4] Natl Univ Singapore, Graphene Res Ctr, Singapore 117546, Singapore
[5] Natl Univ Singapore, Dept Phys, Singapore 117546, Singapore
[6] Boston Univ, Dept Chem, Boston, MA 02215 USA
[7] Curtin Univ, Dept Imaging & Appl Phys, Bentley, WA 6102, Australia
[8] Boston Univ, Dept Phys, Boston, MA 02215 USA
[9] Univ Maryland, Ctr Nanophys & Adv Mat, College Pk, MD 20742 USA
基金
新加坡国家研究基金会; 美国国家科学基金会;
关键词
air stability; oxidation; black phosphorus; XPS; FIELD-EFFECT TRANSISTORS; VALENCE-BAND; PASSIVATION; ATMOSPHERE; SPECTRA;
D O I
10.1021/acsami.5b01297
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The stability of the surface of in situ cleaved black phosphorus crystals upon exposure to atmosphere is investigated with synchrotron-based photoelectron spectroscopy. After 2 days atmosphere exposure a stable subnanometer layer of primarily P2O5 forms at the surface. The work function increases by 0.1 eV from 3.9 eV for as-cleaved black phosphorus to 4.0 eV after formation of the 0.4 nm thick oxide, with phosphorus core levels shifting by <0.1 eV. The results indicate minimal charge transfer, suggesting that the oxide layer is suitable for passivation or as an interface layer for further dielectric deposition.
引用
收藏
页码:14557 / 14562
页数:6
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