RF magnetron sputtered indium tin oxide films with high transmittance and work function for a-Si:H/c-Si heterojunction solar cells

被引：38

作者：

Hussain, Shahzada Qamar ^{[1
,3
]}

Oh, Woong-Kyo ^{[2
]}

Ahn, ShiHyun ^{[2
]}

Le, Anh Huy Tuan ^{[2
]}

Kim, Sunbo ^{[1
]}

Lee, Youngseok ^{[1
]}

Yi, Junsin ^{[1
,2
]}

机构：

[1] Sungkyunkwan Univ, Dept Energy Sci, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Coll Informat & Commun Engn, Suwon 440746, South Korea

[3] COMSATS Inst Informat & Technol, Dept Phys, Lahore 54000, Pakistan

来源：

VACUUM | 2014年 / 101卷

基金：

新加坡国家研究基金会;

关键词：

Reactive ITO films; Work function; Figure of merit; ITO/a-Si:H(p) interface; Barrier height; HIT solar cell; ITO THIN-FILMS; OXYGEN FLOW-RATE; OPTICAL-PROPERTIES; PERFORMANCE;

D O I：

10.1016/j.vacuum.2013.07.004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The RF magnetron sputtered indium tin oxide (ITO) films were deposited on glass substrates with low resistivity, high transmittance and work function for various oxygen (O-2) flow rates. The addition of small O-2 contents during the sputtering process increased the Hall mobility of ITO films while carrier concentration was decreased. The work function of ITO films was enhanced from 4.31 to 4.81 eV through the growth of (222) plane having relatively low surface energy. The highly transparent ITO films were employed as front anti-reflection layer in heterojunction with intrinsic thin layer (HIT) solar cells and the best photo-voltage parameters were found to be; V-oc = 665 mV, J(sc) = 35.1 mA/cm(2), FF = 73.2% and eta = 17.1% for the 02 flow rate of 0.1 sccm. The high work function ITO films play an important role for barrier height modification in HIT solar cell. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：18 / 21

页数：4

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