Characterization of silver-saturated Ge-Te chalcogenide thin films for nonvolatile random access memory

被引：34
作者：
Kim, CJ
Yoon, SG [1 ]
Choi, KJ
Ryu, SO
Yoon, SM
Lee, NY
Yu, BG
机构：
[1] Chungnam Natl Univ, Dept Mat Engn, Taejon 305764, South Korea
[2] ETRI, Basic Res Lab, Taejon 305350, South Korea
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2006年 / 24卷 / 02期
关键词：
D O I：
10.1116/1.2180260
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Programmable metallization cell structure with a device diameter of 2 mu m composed of Ag-Ge-Te chalcogenide films was prepared by a cosputtering technique at room temperature. The device with a 150 nm thick Ag-30(Ge0.3Te0.7)(70) electrolyte switches at 0.2 V from an "off" state resistance R-off Close to 10(6) Omega to an "on" resistance state R-on more than four orders of magnitude lower for this programming current. The switching characteristics were closely related with a diffusion of silver anode into silver-saturated GeTe electrolyte films. (c) 2006 American Vacuum Society.
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页码：721 / 724
页数：4
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