Effect of rapid thermal annealing on texture and properties of pulsed laser deposited zinc oxide thin films

被引：14

作者：

Sekhar, K. C. ^{[1
]}

Levichev, S. ^{[1
]}

Kamakshi, Koppole ^{[1
]}

Doyle, S. ^{[2
]}

Chahboun, A. ^{[1
,3
]}

Gomes, M. J. M. ^{[1
]}

机构：

[1] Univ Minho, Ctr Phys, P-4710057 Braga, Portugal

[2] Karlsruhe Inst Technol, Inst Synchrotron Radiat, Eggenstein Leopoldshafen, Germany

[3] UAE, FST Tanger, Dept Phys, Tangier, Morocco

来源：

MATERIALS LETTERS | 2013年 / 98卷

关键词：

ZnO thin films; Rapid thermal annealing; Grazing incidence x-ray diffraction; Photoluminescence; Electrical properties; ZNO; ORIENTATION;

D O I：

10.1016/j.matlet.2013.02.032

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A comparative study on the properties of pulsed laser deposited ZnO thin films as a function of rapid thermal annealing temperature (T-a) is presented. Grazing incidence x-ray diffraction pattern reveals that preferred orientation of the films changes from (002) to (103) as T-a varies from 500 to 800 degrees C. A clear correlation between grain morphology and texture formation is noticed. Photoluminescence spectra of all films show a strong near-band-edge ultraviolet (UV) emission and the UV emission intensity increases with T-a. Simultaneously, a weak and broad green emission centered at 505 nm corresponds to oxygen vacancies also emerged in the films annealed at T-a >= 600 degrees C. A significant hysteresis behavior is observed in current-voltage characteristics and attributed to trapping/de-trapping driven effect. It is shown that high resistance state is dominated by space charge limited currents and low resistance state is governed by both Pool-Frenkel (2-5 V) and Schottky emission (0-2 V). (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：149 / 152

页数：4

共 19 条

[1] Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering [J].