Piezoresponse Force Microscopy Study of Ferroelectric BaTiO3 Thin Film Directly Deposited on Si(001) by Magnetron Sputtering

被引：1

作者：

Lu, Hongliang ^{[1
,2
]}

Song, Shuangqi ^{[1
]}

Gu, Xiaofeng ^{[3
]}

He, Shuli ^{[4
]}

Chen, Chonglin ^{[5
,6
]}

Song, Gangbing ^{[1
]}

Cai, Zhonghou ^{[7
]}

Guo, Haiming ^{[2
]}

Gao, Hongjun ^{[2
]}

Sun, Li ^{[1
,5
]}

机构：

[1] Univ Houston, Dept Mech Engn, Houston, TX 77204 USA

[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[3] Jiangnan Univ, Dept Elect Engn, Minist Educ, Key Lab Adv Proc Control Light Ind, Wuxi 214122, Peoples R China

[4] Capital Normal Univ, Dept Phys, Beijing 100037, Peoples R China

[5] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA

[6] Univ Texas San Antonio, Dept Phys & Astron, San Antonio, TX 78249 USA

[7] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA

来源：

JOURNAL OF NANO RESEARCH | 2013年 / 22卷

关键词：

Ferroelectric; Thin Film; BaTiO3; Magnetron Sputtering; OXIDE; PHYSICS;

D O I：

10.4028/www.scientific.net/JNanoR.22.23

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Direct integration of ferroelectrics with semiconductors is critical to lower the cost and simplify the production procedures for data storage/processing components and miniature sensor/actuator development. By optimizing magnetron sputtering parameters, highly <001> preferential growth of BaTiO3 thin films with reproducible ferroelectric responses have been achieved on Si(001) substrates. The thin film ferroelectric characteristics were systematically studied by piezoresponse force microscopy, and a piezoelectric coefficient d(33) of 24pm/V has been measured. It is found that the scanning tip sidewall angle and cantilever tilt affect the contour and size of polarized area.

引用

页码：23 / 30

页数：8

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