Piezoresponse Force Microscopy Study of Ferroelectric BaTiO3 Thin Film Directly Deposited on Si(001) by Magnetron Sputtering

被引：1
作者：
Lu, Hongliang [1 ,2 ]
Song, Shuangqi [1 ]
Gu, Xiaofeng [3 ]
He, Shuli [4 ]
Chen, Chonglin [5 ,6 ]
Song, Gangbing [1 ]
Cai, Zhonghou [7 ]
Guo, Haiming [2 ]
Gao, Hongjun [2 ]
Sun, Li [1 ,5 ]
机构：
[1] Univ Houston, Dept Mech Engn, Houston, TX 77204 USA
[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[3] Jiangnan Univ, Dept Elect Engn, Minist Educ, Key Lab Adv Proc Control Light Ind, Wuxi 214122, Peoples R China
[4] Capital Normal Univ, Dept Phys, Beijing 100037, Peoples R China
[5] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA
[6] Univ Texas San Antonio, Dept Phys & Astron, San Antonio, TX 78249 USA
[7] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA
来源：
JOURNAL OF NANO RESEARCH | 2013年 / 22卷
关键词：
Ferroelectric; Thin Film; BaTiO3; Magnetron Sputtering; OXIDE; PHYSICS;
D O I：
10.4028/www.scientific.net/JNanoR.22.23
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Direct integration of ferroelectrics with semiconductors is critical to lower the cost and simplify the production procedures for data storage/processing components and miniature sensor/actuator development. By optimizing magnetron sputtering parameters, highly <001> preferential growth of BaTiO3 thin films with reproducible ferroelectric responses have been achieved on Si(001) substrates. The thin film ferroelectric characteristics were systematically studied by piezoresponse force microscopy, and a piezoelectric coefficient d(33) of 24pm/V has been measured. It is found that the scanning tip sidewall angle and cantilever tilt affect the contour and size of polarized area.
引用
收藏
页码：23 / 30
页数：8
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