Piezoresponse Force Microscopy Study of Ferroelectric BaTiO3 Thin Film Directly Deposited on Si(001) by Magnetron Sputtering

被引：1

作者：

Lu, Hongliang ^{[1
,2
]}

Song, Shuangqi ^{[1
]}

Gu, Xiaofeng ^{[3
]}

He, Shuli ^{[4
]}

Chen, Chonglin ^{[5
,6
]}

Song, Gangbing ^{[1
]}

Cai, Zhonghou ^{[7
]}

Guo, Haiming ^{[2
]}

Gao, Hongjun ^{[2
]}

Sun, Li ^{[1
,5
]}

机构：

[1] Univ Houston, Dept Mech Engn, Houston, TX 77204 USA

[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[3] Jiangnan Univ, Dept Elect Engn, Minist Educ, Key Lab Adv Proc Control Light Ind, Wuxi 214122, Peoples R China

[4] Capital Normal Univ, Dept Phys, Beijing 100037, Peoples R China

[5] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA

[6] Univ Texas San Antonio, Dept Phys & Astron, San Antonio, TX 78249 USA

[7] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA

来源：

JOURNAL OF NANO RESEARCH | 2013年 / 22卷

关键词：

Ferroelectric; Thin Film; BaTiO3; Magnetron Sputtering; OXIDE; PHYSICS;

D O I：

10.4028/www.scientific.net/JNanoR.22.23

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Direct integration of ferroelectrics with semiconductors is critical to lower the cost and simplify the production procedures for data storage/processing components and miniature sensor/actuator development. By optimizing magnetron sputtering parameters, highly <001> preferential growth of BaTiO3 thin films with reproducible ferroelectric responses have been achieved on Si(001) substrates. The thin film ferroelectric characteristics were systematically studied by piezoresponse force microscopy, and a piezoelectric coefficient d(33) of 24pm/V has been measured. It is found that the scanning tip sidewall angle and cantilever tilt affect the contour and size of polarized area.

引用

页码：23 / 30

页数：8

共 47 条

[21] Basic Properties of Resistive Memory Diode Composed of BaTiO3 Ferroelectric Thin Film by MOD Process [J].

Sugie, Toshiyuki ;

Hashimoto, Shuhei ;

Zhang, Ziyang ;

Yamashita, Kaoru ;

Noda, Minoru .

2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 2015,

[22] Electrical properties of sol-gel deposited BaTiO3 thin films on Si(100) substrates [J].

Cho, CR ;

Kwun, SI ;

Noh, TW ;

Jang, MS .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (4A) :2196-2199

[23] Ferroelectric properties and piezoresponse force micoroscopy study of Bi3TaTiO9 thin films [J].

Shin, Hyun Wook ;

Ahn, Yoonho ;

Son, Jong Yeog .

ULTRAMICROSCOPY, 2019, 196 :49-53

[24] The study of ferroelectric La-doped PbTiO3 thin films prepared by RF magnetron sputtering [J].

Yang, CT ;

Zhang, SR ;

Liu, JS ;

Wu, MQ .

INTEGRATED FERROELECTRICS, 2003, 52 :223-228

[25] Ferroelectric properties of NaNbO3-BaTiO3 thin films deposited on SrRuO3/(001)SrTiO3 substrate by pulsed laser deposition [J].

Yamazoe, Seiji ;

Oda, Shinya ;

Sakurai, Hiroyuki ;

Adachi, Hideaki ;

Wada, Takahiro .

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2009, 117 (1361) :66-71

[26] Nanocrystalline γ-Al2O3 thin film deposited by magnetron sputtering (MS) at low temperature [J].

Adele Carradò ;

Mohamed A. Taha ;

Nahed A. El-Mahallawy .

Journal of Coatings Technology and Research, 2010, 7 :515-519

[27] CO2 Gas Sensor based on BaTiO3 Thin Film Deposited via Ultrasonic Spray [J].

Hijazi, Mohamad ;

Bernardini, Sandrine ;

Le Pennec, Fabien ;

Aguir, Khalifa ;

Seguin, Luc ;

Bendahan, Marc .

2018 IEEE SENSORS, 2018, :848-850

[28] Detection of NH3 using ZnO thin film sensor deposited on Si/SiO2 substrate derived by RF magnetron sputtering [J].

Dwivedi, Mohini ;

Sharma, Ashok ;

Bhargava, Jitendra ;

Vyas, Vimal ;

Eranna, G. .

Sensor Letters, 2015, 13 (07) :618-624

[29] Investigation on Characteristics of Resistance Change by Coexistence of Oxygen Vacancy and Polarization Reversal in MOD BaTiO3 Ferroelectric Thin Film [J].

Hashimoto, S. ;

Sugie, T. ;

Zhang, Z. ;

Yamashita, K. ;

Noda, M. .

2015 JOINT IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRIC, INTERNATIONAL SYMPOSIUM ON INTEGRATED FUNCTIONALITIES AND PIEZOELECTRIC FORCE MICROSCOPY WORKSHOP (ISAF/ISIF/PFM), 2015, :105-107

[30] Erratum to: Photoinduced effects of ferroelectric domains in PbZr1xTixO3 thin films as obtained by using piezoresponse force microscopy [J].

Y. H. Jang ;

C. H. Kim ;

H. J. Hwang ;

H. B. Moon ;

S. H. Bhang ;

J. H. Cho .

Journal of the Korean Physical Society, 2013, 62 :853-853

← 1 2 3 4 5 →