Negative differential resistance in direct bandgap GeSn p-i-n structures

被引：28
|
作者：
Schulte-Braucks, C. [1 ,2 ]
Stange, D. [1 ,2 ]
von den Driesch, N. [1 ,2 ]
Blaeser, S. [1 ,2 ]
Ikonic, Z. [3 ]
Hartmann, J. M. [4 ,5 ]
Mantl, S. [1 ,2 ]
Buca, D. [1 ,2 ]
机构：
[1] Peter Grunberg Inst PGI 9, D-52428 Julich, Germany
[2] Forschungszentrum Julich, JARA FIT, D-52428 Julich, Germany
[3] Univ Leeds, Inst Microwaves & Photon, Sch Elect & Elect Engn, Leeds LS2 9JT, W Yorkshire, England
[4] Univ Grenoble Alpes, F-38000 Grenoble, France
[5] CEA, LETI, F-38054 Grenoble, France
来源：
APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 04期
关键词：
SI;
D O I：
10.1063/1.4927622
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Certain GeSn alloys are group IV direct bandgap semiconductors with prospects for electrical and optoelectronical applications. In this letter, we report on the temperature dependence of the electrical characteristics of high Sn-content Ge0.89Sn0.11 p-i-n diodes. NiGeSn contacts were used to minimize the access resistance and ensure compatibility with silicon technology. The major emphasis is placed on the negative differential resistance in which peak to valley current ratios up to 2.3 were obtained. TCAD simulations were performed to identify the origin of the various current contributions, providing evidence for direct band to band tunneling and trap assisted tunneling. (C) 2015 AIP Publishing LLC.
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页数：4
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