An Accurate Compact Model For Gallium Nitride Gate Injection Transistor For Next Generation of Power Electronics Design

被引：0

作者：

Kotecha, Ramchandra M. ^{[1
]}

Zhang, Yuzhi ^{[1
]}

Wallace, Andrea ^{[1
]}

Zhu, Nan ^{[1
]}

Rashid, Arman ^{[1
]}

Vrotsos, Tom ^{[1
]}

Mantooth, H. Alan ^{[1
]}

机构：

[1] Univ Arkansas, NSF I UCRC Grid Connected Adv Power Elect Syst GR, Fayetteville, AR 72701 USA

来源：

2017 IEEE 18TH WORKSHOP ON CONTROL AND MODELING FOR POWER ELECTRONICS (COMPEL) | 2017年

基金：

美国国家科学基金会;

关键词：

Gallium Nitride (GaN); Wide band-gap (WBG) devices; high electron mobility transistor (HEMT); compact modeling; power semiconductor devices; high-speed power electronics; high-efficiency power electronics; device modeling;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

A physics-based analytical and compact device model for an enhancement-mode gallium nitride gate injection transistor is presented in this work. The model is implemented in Saber (R) using MAST hardware description language (HDL). The physics-based model allows the user to extract the model parameters from the dc I-V and C-V characteristics that are readily available in the device datasheets. The classical driftdiffusion model of carrier transport is used to describe the lateral channel current resulting from a very large concentration of carriers at the AlGaN/GaN hetero-junction. The dynamic validation of the model has been demonstrated against the measured characteristics of a 600 V commercial Panasonic GaN transistor using a double-pulse test circuit. The simulated vs. measured device characteristics show satisfactory agreement and validate the model for future power electronics applications and design.

引用

页数：6

共 6 条

[1] A Physics-Based Compact Gallium Nitride Power Semiconductor Device Model for Advanced Power Electronics Design
Kotecha, Ramchandra M.
Zhang, Yuzhi
Rashid, Arman
Zhu, Nan
Vrotsos, Tom
Mantooth, H. Alan
2017 THIRTY SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC), 2017, : 2685 - 2691
[2] Compact Modeling of High-Voltage Gallium Nitride Power Semiconductor Devices for Advanced Power Electronics Design
Kotecha R.M.
Hossain M.M.
Rashid A.U.
Emon A.I.
Zhang Y.
Mantooth H.A.
IEEE Open Journal of Power Electronics, 2021, 2 : 75 - 87
[3] Power Cycling Results of Discrete Gallium Nitride Gate Injection Transistors
Goller, Maximilian
Franke, Joerg
Lutz, Josef
Basler, Thomas
2021 23RD EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'21 ECCE EUROPE), 2021,
[4] Thermal measurement of dissipated power for Gallium Nitride Gate Injection Transistors
Wydzgowski, L.
Tarczewski, T.
Grzesiak, L. M.
2019 21ST EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE '19 ECCE EUROPE), 2019,
[5] Simple and Accurate Circuit Simulation Model for Gallium Nitride Power Transistors
Shah, Krushal
Shenai, Krishna
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (10) : 2735 - 2741
[6] A compact model for dual-gate GaAs PHEMT and application for power amplifier design
Lv, Zhihao
Xu, Zhiwei
Song, Chunyi
IEICE ELECTRONICS EXPRESS, 2021, 18 (20):

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