Interaction between Antimony Atoms and Micropores in Silicon

被引：0

作者：

Odzhaev, V. B. ^{[1
]}

Petlitskii, A. N. ^{[2
]}

Plebanovich, V. I. ^{[3
]}

Sadovskii, P. K. ^{[1
]}

Tarasik, M. I. ^{[1
]}

Chelyadinskii, A. R. ^{[1
]}

机构：

[1] Belarusian State Univ, Minsk 220030, BELARUS

[2] Integral, Minsk, BELARUS

[3] Planar, Minsk, BELARUS

来源：

PHYSICS OF THE SOLID STATE | 2018年 / 60卷 / 01期

关键词：

CAVITIES; IMPLANTATION; DIFFUSION; DEFECTS;

D O I：

10.1134/S1063783418010158

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The interaction between Sb atoms and micropores of a getter layer in silicon is studied. The getter layer was obtained via implantation of Sb+ ions into silicon and subsequent heat treatment processes. The antimony atoms located in the vicinity of micropores are captured by micropores during gettering annealing and lose its electrical activity. The activation energy of capture process to the pores for antimony is lower than that of antimony diffusion in silicon deformation fields around microvoids on the diffusion process.

引用

页码：20 / 22

页数：3

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