Interaction between Antimony Atoms and Micropores in Silicon

被引：0

作者：

Odzhaev, V. B. ^{[1
]}

Petlitskii, A. N. ^{[2
]}

Plebanovich, V. I. ^{[3
]}

Sadovskii, P. K. ^{[1
]}

Tarasik, M. I. ^{[1
]}

Chelyadinskii, A. R. ^{[1
]}

机构：

[1] Belarusian State Univ, Minsk 220030, BELARUS

[2] Integral, Minsk, BELARUS

[3] Planar, Minsk, BELARUS

来源：

PHYSICS OF THE SOLID STATE | 2018年 / 60卷 / 01期

关键词：

CAVITIES; IMPLANTATION; DIFFUSION; DEFECTS;

D O I：

10.1134/S1063783418010158

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The interaction between Sb atoms and micropores of a getter layer in silicon is studied. The getter layer was obtained via implantation of Sb+ ions into silicon and subsequent heat treatment processes. The antimony atoms located in the vicinity of micropores are captured by micropores during gettering annealing and lose its electrical activity. The activation energy of capture process to the pores for antimony is lower than that of antimony diffusion in silicon deformation fields around microvoids on the diffusion process.

引用

页码：20 / 22

页数：3

共 50 条

[31] Silicon nitride resistance switching MIS cells doped with silicon atoms
Mavropoulis, A.
Vasileiadis, N.
Bonafos, C.
Normand, P.
Ioannou-Sougleridis, V.
Sirakoulis, G. Ch.
Dimitrakis, P.
SOLID-STATE ELECTRONICS, 2024, 213
[32] Effects of hydrogen atoms on redistribution of implanted boron atoms in silicon during annealing
Yokota, Katsuhiro
Nakase, Shuusaku
Myashita, Fumiyoshi
ION IMPLANTATION TECHNOLOGY, 2006, 866 : 88 - +
[33] CH/π Interaction between Benzene and Hydrocarbons Having Six Carbon Atoms in Their Binary Liquid Mixtures
Kasahara, Yasutoshi
Suzuki, Yuji
Kabasawa, Aino
Minami, Hideyuki
Matsuzawa, Hideyo
Wahashi, Makio
JOURNAL OF OLEO SCIENCE, 2010, 59 (01) : 21 - 29
[34] Modelling interaction of atoms and ions with graphene
Chan, Y.
Hill, J. M.
MICRO & NANO LETTERS, 2010, 5 (05) : 247 - 250
[35] Simulation of interaction between nickel and silicon carbide during the formation of ohmic contacts
Aleksandrov, O. V.
Kozlovski, V. V.
SEMICONDUCTORS, 2009, 43 (07) : 885 - 891
[36] Statistical insights into the reaction of fluorine atoms with silicon
Knizikevicius, Rimantas
SCIENTIFIC REPORTS, 2020, 10 (01)
[37] Ferromagnetic Properties of Silicon Doped Manganese Atoms
N. F. Zikrillaev
S. V. Koveshnikov
Levent Trabzon
G. Kh. Mavlonov
B. K. Ismaylov
T. B. Ismailov
F. E. Urakova
Surface Engineering and Applied Electrochemistry, 2025, 61 (1) : 75 - 80
[38] Composition of Silicon Alloyed with Gallium and Phosphorus Atoms
Zikrillaev, N. F.
Koveshnikov, S. V.
Turekeev, X. S.
Ismailov, B. K.
JOURNAL OF SURFACE INVESTIGATION, 2024, 18 (01): : 69 - 73
[39] Adsorption and Diffusion of Atoms of Groups 1, 2 and 13 Elements on Antimony Telluride Surface
Ryabishchenkova, A. G.
Kuznetsov, V. M.
RUSSIAN PHYSICS JOURNAL, 2019, 62 (03) : 512 - 518
[40] Adsorption and Diffusion of Atoms of Groups 1, 2 and 13 Elements on Antimony Telluride Surface
A. G. Ryabishchenkova
V. M. Kuznetsov
Russian Physics Journal, 2019, 62 : 512 - 518

← 1 2 3 4 5 →