Interaction between Antimony Atoms and Micropores in Silicon

被引：0

作者：

Odzhaev, V. B. ^{[1
]}

Petlitskii, A. N. ^{[2
]}

Plebanovich, V. I. ^{[3
]}

Sadovskii, P. K. ^{[1
]}

Tarasik, M. I. ^{[1
]}

Chelyadinskii, A. R. ^{[1
]}

机构：

[1] Belarusian State Univ, Minsk 220030, BELARUS

[2] Integral, Minsk, BELARUS

[3] Planar, Minsk, BELARUS

来源：

PHYSICS OF THE SOLID STATE | 2018年 / 60卷 / 01期

关键词：

CAVITIES; IMPLANTATION; DIFFUSION; DEFECTS;

D O I：

10.1134/S1063783418010158

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The interaction between Sb atoms and micropores of a getter layer in silicon is studied. The getter layer was obtained via implantation of Sb+ ions into silicon and subsequent heat treatment processes. The antimony atoms located in the vicinity of micropores are captured by micropores during gettering annealing and lose its electrical activity. The activation energy of capture process to the pores for antimony is lower than that of antimony diffusion in silicon deformation fields around microvoids on the diffusion process.

引用

页码：20 / 22

页数：3

共 50 条

[21] A model of clustering of phosphorus atoms in silicon
Velichko, OI
Dobrushkin, VA
Pakula, L
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 123 (02): : 176 - 180
[22] Codiffusion of Gallium and Phosphorus Atoms in Silicon
Zikrillaev, N. F.
Isamov, S. B.
Koveshnikov, S. V.
Kenzhaev, Z. T.
Turekeev, Kh. S.
SURFACE ENGINEERING AND APPLIED ELECTROCHEMISTRY, 2023, 59 (02) : 210 - 215
[23] Codiffusion of Gallium and Phosphorus Atoms in Silicon
N. F. Zikrillaev
S. B. Isamov
S. V. Koveshnikov
Z. T. Kenzhaev
Kh. S. Turekeev
Surface Engineering and Applied Electrochemistry, 2023, 59 : 210 - 215
[24] INTERACTION BETWEEN THE 30° PARTIAL DISLOCATION AND HEX-VACANCY IN SILICON
Wang, Chaoying
Wang, Zhenqing
Li, Guojun
Meng, Qingyuan
MODERN PHYSICS LETTERS B, 2012, 26 (24):
[25] Competitive Interaction between Segregation Gettering and Surface Precipitation of Nickel in p/p+ Silicon Epitaxial Wafers
Torigoe, Kazuhisa
Ono, Toshiaki
Nakamura, Kozo
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 4 (09) : Q110 - Q114
[26] Three-dimensional visualization of the interaction between fatigue crack and micropores in an aluminum alloy using synchrotron X-ray microtomography
Zhang, H.
Toda, H.
Hara, H.
Kobayashi, M.
Kobayashi, T.
Sugiyama, D.
Kuroda, N.
Uesugi, K.
METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 2007, 38A (08): : 1774 - 1785
[27] Interaction between the divacancy and hydrogen in silicon: Observation of fast and slow kinetics
Kolevatov, I. L.
Svensson, B. G.
Monakhov, E. V.
JOURNAL OF APPLIED PHYSICS, 2018, 124 (08)
[28] Interaction of A-centers with isovalent impurities in silicon
Chroneos, A.
Londos, C. A.
JOURNAL OF APPLIED PHYSICS, 2010, 107 (09)
[29] Interaction of interstitials with buried amorphous layer in silicon
Oliviero, E.
David, M. L.
Fichtner, P. F. P.
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 8, 2009, 6 (08): : 1969 - +
[30] Identification of titanium-hydrogen complexes with up to four hydrogen atoms in silicon
Scheffler, L.
Kolkovsky, Vi.
Weber, J.
JOURNAL OF APPLIED PHYSICS, 2015, 117 (08)

← 1 2 3 4 5 →