Optimization of ambipolar current and analog/RF performance for T-shaped tunnel field-effect transistor with gate dielectric spacer

被引:6
作者
Han, Ru [1 ]
Zhang, Hai-Chao [1 ]
Wang, Dang-Hui [1 ]
Li, Cui [1 ]
机构
[1] Northwestern Polytech Univ, Sch Comp Sci & Engn, Xian 710072, Shaanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
tunneling field effect transistor; T-shaped tunnel field-effect transistor; gate dielectric spacer; ambipolar current; analog/RF performance; RF PERFORMANCE; SUPPRESSION; IMPACT;
D O I
10.1088/1674-1056/28/1/018505
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A new T-shaped tunnel field-effect transistor (TTFET) with gate dielectric spacer (GDS) structure is proposed in this paper. To further studied the effects of GDS structure on the TTFET, detailed device characteristics such as current-voltage relationships, energy band diagrams, band-to-band tunneling (BTBT) rate and the magnitude of the electric field are investigated by using TCAD simulation. It is found that compared with conventional TTFET and TTFET with gate-drain overlap (GDO) structure, GDS-TTFET not only has the minimum ambipolar current but also can suppress the ambipolar current under a more extensive bias range. Furthermore, the analog/RF performances of GDS-TTFET are also investigated in terms of transconductance, gate-source capacitance, gate-drain capacitance, cutoff frequency, and gain bandwidth production. By inserting a low-kappa spacer layer between the gate electrode and the gate dielectric, the GDS structure can effectively reduce parasitic capacitances between the gate and the source/drain, which leads to better performance in term of cutoff frequency and gain bandwidth production. Finally, the thickness of the gate dielectric spacer is optimized for better ambipolar current suppression and improved analog/RF performance.
引用
收藏
页数:7
相关论文
共 37 条
[11]   A Novel PNPN-Like Z-Shaped Tunnel Field-Effect Transistor With Improved Ambipolar Behavior and RF Performance [J].
Imenabadi, Rouzbeh Molaei ;
Saremi, Mehdi ;
Vandenberghe, William G. .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (11) :4752-4758
[12]   Tunnel field-effect transistors as energy-efficient electronic switches [J].
Ionescu, Adrian M. ;
Riel, Heike .
NATURE, 2011, 479 (7373) :329-337
[13]   Roadmap for 22 nm and beyond [J].
Iwai, H. .
MICROELECTRONIC ENGINEERING, 2009, 86 (7-9) :1520-1528
[14]   Analytical threshold voltage model for strained silicon GAA-TFET [J].
Kang, Hai-Yan ;
Hu, Hui-Yong ;
Wang, Bin .
CHINESE PHYSICS B, 2016, 25 (11)
[15]   Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs [J].
Kao, Kuo-Hsing ;
Verhulst, Anne S. ;
Vandenberghe, William G. ;
Soree, Bart ;
Groeseneken, Guido ;
De Meyer, Kristin .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (02) :292-301
[16]   Vertical type double gate tunnelling FETs with thin tunnel barrier [J].
Kim, Jang Hyun ;
Kim, Sang Wan ;
Kim, Hyun Woo ;
Park, Byung-Gook .
ELECTRONICS LETTERS, 2015, 51 (09) :718-719
[17]   Demonstration of L-Shaped Tunnel Field-Effect Transistors [J].
Kim, Sang Wan ;
Kim, Jang Hyun ;
Liu, Tsu-Jae King ;
Choi, Woo Young ;
Park, Byung-Gook .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (04) :1774-1778
[18]  
KIM SW, 2012, JPN J APPL PHYS, V51
[19]   Effects of Localized Body Doping on Switching Characteristics of Tunnel FET Inverters With Vertical Structures [J].
Kwon, Dae Woong ;
Kim, Hyun Woo ;
Kim, Jang Hyun ;
Park, Euyhwan ;
Lee, Junil ;
Kim, Wandong ;
Kim, Sangwan ;
Lee, Jong-Ho ;
Park, Byung-Gook .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (04) :1799-1805
[20]   Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric [J].
Li, Cong ;
Yan, Zhi-Rui ;
Zhuang, Yi-Qi ;
Zhao, Xiao-Long ;
Guo, Jia-Min .
CHINESE PHYSICS B, 2018, 27 (07)