Thickness determination of thin polycrystalline film by grazing incidence X-ray diffraction

被引:3
作者
Lhotka, J
Kuzel, R
Cappuccio, G
Valvoda, V [1 ]
机构
[1] Charles Univ, Fac Math & Phys, CR-12116 Prague 2, Czech Republic
[2] CNR, Ist Strutturist Chim, I-00016 Montelibretti Sc, Italy
[3] Ist Nazl Fis Nucl, Lab Nazl Frascati, I-00044 Frascati, Italy
关键词
titanium nitride; X-ray diffraction; thickness determination;
D O I
暂无
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Thickness measurement based on the absorption of X-rays in thin films has been tested on polycrystalline titanium nitride film deposited on a tungsten carbide substrate. The intensity of three reflections from each material was measured for incidence angles of the primary beam ranging from 0.5 to 35 degrees. After experimental correction for texture effects, data from the TiN film and the WC substrate were fitted by known functions using least-squares routines. The substrate reflection intensity was found to be more suitable for determining the thickness of the overlaying thin film. The average thickness of TiN film (2.00 +/- 0.17 mum) determined from the substrate reflections was in fair agreement with the average value obtained from optical microscopy (2.2 +/- 0.8 mum). The thickness values determined from the TiN thin film reflections are very unreliable, due to high sensitivity of the measurements to disturbing instrumental and sample effects at small angles. (C) 2001 Elsevier Science BN. All rights reserved.
引用
收藏
页码:96 / 101
页数:6
相关论文
共 50 条
  • [31] Multi-reflection method and grazing incidence geometry used for stress measurement by X-ray diffraction
    Baczmanski, A
    Braham, C
    Seiler, W
    Shiraki, N
    SURFACE & COATINGS TECHNOLOGY, 2004, 182 (01) : 43 - 54
  • [32] Biaxial growth of pentacene on rippled silica surfaces studied by rotating grazing incidence X-ray diffraction
    Pachmajer, Stefan
    Werzer, Oliver
    Mennucci, Carlo
    de Mongeot, Francesco Buatier
    Resel, R.
    JOURNAL OF CRYSTAL GROWTH, 2019, 519 : 69 - 76
  • [33] Comparison of X-ray diffraction methods for determination of the critical layer thickness for dislocation multiplication
    X. G. Zhang
    P. Li
    D. W. Parent
    G. Zhao
    J. E. Ayers
    F. C. Jain
    Journal of Electronic Materials, 1999, 28 : 553 - 558
  • [34] Determination of non-uniform graphene thickness on SiC (0001) by X-ray diffraction
    Ruammaitree, A.
    Nakahara, H.
    Akimoto, K.
    Soda, K.
    Saito, Y.
    APPLIED SURFACE SCIENCE, 2013, 282 : 297 - 301
  • [35] Effect of amorphous interface layers on crystalline thin-film x-ray diffraction
    Weisemoeller, T.
    Bertram, F.
    Gevers, S.
    Deiter, C.
    Greuling, A.
    Wollschlaeger, J.
    PHYSICAL REVIEW B, 2009, 79 (24):
  • [36] Studies on the electrical conductivity, optical absorption and x-ray diffraction in bismuth thin film
    K Jayachandran
    C S Menon
    Pramana, 1998, 50 : 221 - 226
  • [37] Studies on the electrical conductivity, optical absorption and x-ray diffraction in bismuth thin film
    Jayachandran, K
    Menon, CS
    PRAMANA-JOURNAL OF PHYSICS, 1998, 50 (03): : 221 - 226
  • [38] X-ray film as a two-dimensional detector for X-ray diffraction analysis
    Blanton, TN
    POWDER DIFFRACTION, 2003, 18 (02) : 91 - 98
  • [39] Corrections for residual stress in X-ray grazing incidence technique
    Wronski, S.
    Wierzbanowski, K.
    Baczmanski, A.
    Braham, Ch.
    Lodini, A.
    ARCHIVES OF METALLURGY AND MATERIALS, 2008, 53 (01) : 275 - 281
  • [40] TEM and X-ray diffraction investigation of the structural characteristics of the microporous oxide film formed on polycrystalline Ti
    de Mussy, JPG
    Langelaan, G
    Decerf, J
    Delplancke, JL
    SCRIPTA MATERIALIA, 2003, 48 (01) : 23 - 29