Nature of band-gap states in V-doped TiO2 revealed by resonant photoemission

被引：28

作者：

Morris, D

Dixon, R

Jones, FH

Dou, Y

Egdell, RG

Downes, SW

Beamson, G

机构：

[1] UNIV OXFORD,INORGAN CHEM LAB,OXFORD OX1 3QR,ENGLAND

[2] SERC,DARESBURY LAB,RES UNIT SURFACES TRANFORMS & INTERFACES,WARRINGTON WA4 4AD,CHESHIRE,ENGLAND

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.55.16083

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Band-gap states in V-doped TiO2 have been studied by photoemission spectroscopy over a range of photon energies encompassing the Ti 3p and V 3p core thresholds. The states show resonant enhancement at photon energies significantly higher than found for Ti 3d states introduced into TiO2 by oxygen deficiency or alkalimetal adsorbates. This demonstrates that the gap states relate to electrons trapped on dopant V cations rather than host Ti cations.

引用

页码：16083 / 16087

页数：5

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