Nature of band-gap states in V-doped TiO2 revealed by resonant photoemission

Band-gap states in V-doped TiO2 have been studied by photoemission spectroscopy over a range of photon energies encompassing the Ti 3p and V 3p core thresholds. The states show resonant enhancement at photon energies significantly higher than found for Ti 3d states introduced into TiO2 by oxygen deficiency or alkalimetal adsorbates. This demonstrates that the gap states relate to electrons trapped on dopant V cations rather than host Ti cations.