Theoretical Monte Carlo study of the formation and evolution of defects in the homoepitaxial growth of SiC

被引：18

作者：

Camarda, M. ^{[1
]}

La Magna, A. ^{[1
]}

Fiorenza, P. ^{[1
]}

Izzo, G. ^{[1
]}

La Via, F. ^{[1
]}

机构：

[1] CNR, IMM, I-95121 Catania, Italy

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

computer simulation; defects; growth models; surface structures; atomic force microscopy; EPITAXIAL-GROWTH;

D O I：

10.4028/www.scientific.net/MSF.600-603.135

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A novel Monte Carlo kinetic model has been developed and implemented to predict growth rate regimes and defect formation for the homo-epitaxial growth of various SiC polytypes on different substrates. Using this model we have studied the generation of both point like and extended defects in terms of the growth rate and off-cut angle, finding qualitative agreement with both electrical and optical characterization and analytical results.

引用

页码：135 / 138

页数：4

共 8 条

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Avrami M., 1940, J CHEM PHYS, V8, P212, DOI DOI 10.1063/1.1750631

[2] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].