Effect of Substitutionally Boron-Doped Single-Walled Semiconducting Zigzag Carbon Nanotubes on Ammonia Adsorption

被引:9
|
作者
Vikramaditya, Talapunur [1 ]
Sumithra, Kanakamma [1 ]
机构
[1] Birla Inst Technol & Sci BITS Pilani, Dept Chem, Hyderabad 500078, Andhra Pradesh, India
关键词
adsorption; carbon nanotubes; substitutional; doping; band structure; IR-SPECTRA; AB-INITIO; SENSITIVITY; MOLECULES; SENSOR; NH3;
D O I
10.1002/jcc.23526
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We investigate the binding of ammonia on intrinsic and substitutionally doped semiconducting single-walled carbon nanotubes (SWCNTs) on the side walls using density functional calculations. Ammonia is found to be weakly physisorbed on intrinsic semiconducting nanotubes while on substitutional doping with boron its affinity is enhanced considerably reflected with increase in binding energies and charge transfer. This is attributed to the strong chemical interaction between electron rich nitrogen of ammonia and electron deficient boron of the doped SWCNT. On doping, the density of states are changed compared to the intrinsic case and additional levels are formed near the Fermi level leading to overlap of levels with that of ammonia indicating charge transfer. The doped SWCNTs thus are expected to be a potential candidate for detecting ammonia. (c) 2014 Wiley Periodicals, Inc.
引用
收藏
页码:586 / 594
页数:9
相关论文
共 50 条
  • [31] Terahertz current oscillations in single-walled zigzag carbon nanotubes
    Akturk, Akin
    Goldsman, Neil
    Pennington, Gary
    Wickenden, Alma
    PHYSICAL REVIEW LETTERS, 2007, 98 (16)
  • [32] Study on the Penetrating Energy of Zigzag Single-walled Carbon Nanotubes
    Zhang Chao
    Pan Chengling
    Sheng Shaoding
    CHEMICAL JOURNAL OF CHINESE UNIVERSITIES-CHINESE, 2016, 37 (06): : 1108 - 1114
  • [33] Boron-Doped Single-Walled Carbon Nanotube-Based Single-Electron Transistor
    Parashar, Sweta
    3RD INTERNATIONAL CONFERENCE ON CONDENSED MATTER & APPLIED PHYSICS (ICC-2019), 2020, 2220
  • [34] Preferential Adsorption of Zigzag Single-Walled Carbon Nanotubes on the ST-Cut Surface of Quartz
    Burgos, Juan C.
    Balbuena, Perla B.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2013, 117 (09): : 4639 - 4646
  • [35] Hollow Adsorption on Zigzag Single-Walled Carbon Nanotubes: Repulsive First-Neighbor Interactions
    Phares, Alain J.
    Grumbine, David W., Jr.
    Wunderlich, Francis J.
    LANGMUIR, 2010, 26 (13) : 10750 - 10757
  • [36] Semiconducting Single-Walled Carbon Nanotubes on Demand by Polymer Wrapping
    Gomulya, Widianta
    Diaz Costanzo, Guadalupe
    Figueiredo de Carvalho, Elton J.
    Bisri, Satria Zulkarnaen
    Derenskyi, Vladimir
    Fritsch, Martin
    Froehlich, Nils
    Allard, Sybille
    Gordiichuk, Pavlo
    Herrmann, Andreas
    Marrink, Siewert Jan
    dos Santos, Maria Cristina
    Scherf, Ulrich
    Loi, Maria Antonietta
    ADVANCED MATERIALS, 2013, 25 (21) : 2948 - 2956
  • [37] On the origin of preferential growth of semiconducting single-walled carbon nanotubes
    Li, YM
    Peng, S
    Mann, D
    Cao, J
    Tu, R
    Cho, KJ
    Dai, HJ
    JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (15): : 6968 - 6971
  • [38] Exciton binding energy in semiconducting single-walled carbon nanotubes
    Ma, YZ
    Valkunas, L
    Bachilo, SM
    Fleming, GR
    JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (33): : 15671 - 15674
  • [39] Ultrafast Exciton Dephasing in Semiconducting Single-Walled Carbon Nanotubes
    Ma, Ying-Zhong
    Graham, Matthew W.
    Fleming, Graham R.
    Green, Alexander A.
    Hersam, Mark C.
    PHYSICAL REVIEW LETTERS, 2008, 101 (21)
  • [40] Synaptic Plasticity in Semiconducting Single-Walled Carbon Nanotubes Transistors
    Talsma, Wytse
    van Loo, Hilbert
    Shao, Shuyan
    Jung, Stefan
    Allard, Sybille
    Scherf, Ullrich
    Loi, Maria Antonietta
    ADVANCED INTELLIGENT SYSTEMS, 2020, 2 (12)