Nonlinear and saturable absorption characteristics of Ho doped InSe crystals

被引：15

作者：

Yuksek, Mustafa ^{[1
]}

Yaglioglu, H. Gul ^{[2
]}

Elmali, Ayhan ^{[2
]}

Aydin, E. Murat ^{[2
]}

Kurum, Ulas ^{[2
]}

Ates, Aytunc ^{[3
]}

机构：

[1] Kafkas Univ, Engn & Architecture Fac, Dept Elect Elect Engn, TR-36100 Kars, Turkey

[2] Ankara Univ, Fac Engn, Dept Engn Phys, TR-06100 Ankara, Turkey

[3] Yildirim Beyazit Univ, Fac Engn & Nat Sci, Dept Mat Engn, TR-06030 Ankara, Turkey

来源：

OPTICS COMMUNICATIONS | 2014年 / 310卷

关键词：

Semiconductor; Nonlinear absorption; Saturable absorber; Two photon absorption; Z-scan; SINGLE-CRYSTALS; ELECTRICAL-PROPERTIES; 2-PHOTON ABSORPTION; GASE SEMICONDUCTOR; GALLIUM SELENIDE; IMPURITY LEVELS; TRANSITIONS; PULSES; LASER;

D O I：

10.1016/j.optcom.2013.07.078

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

InSe:Ho (%0.005) and InSe:Ho (%0.05) single crystals were grown using the Bridgman-Stocbarger method. The nonlinear and saturable absorption characteristics of InSe:Ho (%0.005) and InSe:Ho (%0.05) single crystals were investigated by open aperture Z-scan technique with 4 ns and 65 ps pulse durations at 1064 nm. Both crystals show nonlinear absorption for 4 ns pulse duration at low and high input intensities. However, picosecond measurements show saturable absorption behavior at low input intensities while nonlinear absorption becomes dominant at high input intensities. This indicates that the life time of the doping states is shorter than 4 ns pulse duration. Saturable absorption behavior can be attributed to filling of the doping states. Our results show that nonlinear absorption coefficient increases with increasing Ho concentration due to increasing of free carrier concentration. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：100 / 103

页数：4

共 37 条

[1] DIRECT AND INDIRECT 2-PHOTON PROCESSES IN LAYERED SEMICONDUCTORS
ADDUCI, F
CATALANO, IM
CINGOLANI, A
MINAFRA, A
[J]. PHYSICAL REVIEW B, 1977, 15 (02): : 926 - 931
[2] Adomian G., 1994, Fundamental Theories of Physics
[3] Two-photon absorption in layered TlGaSe2, TlInS2, TlGaS2 and GaSe crystals
Allakhverdiev, KR
[J]. SOLID STATE COMMUNICATIONS, 1999, 111 (05) : 253 - 257
[4] Anisotropy of two-photon absorption in gallium selenide at 1064 nm
Allakhverdiev, KR
Baykara, T
Joosten, S
Günay, E
Kaya, AA
Kulibekov, A
Seilmeier, A
Salaev, EY
[J]. OPTICS COMMUNICATIONS, 2006, 261 (01) : 60 - 64
[5] [Anonymous], IEEE J QUANTUM ELECT
[6] Absorption measurement and urbach's rule in InSe and InSe:HO0.0025, InSe:Ho0.025 single crystals
Ates, A
Yildirim, M
Gürbulak, B
[J]. OPTICAL MATERIALS, 2006, 28 (05) : 488 - 493
[7] Investigation of the electrical properties of Ho-doped InSe single crystal
Ates, A
Yildirim, M
Gürbulak, B
[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (01) : 85 - 90
[8] Bringuier E., 1994, PHYS REV B, V49, P971
[9] 2ND HARMONIC-GENERATION IN INSE
CATALANO, IM
CINGOLANI, A
CALI, C
RIVASANSEVERINO, S
[J]. SOLID STATE COMMUNICATIONS, 1979, 30 (09) : 585 - 588
[10] Near-resonant high order nonlinear absorption of ZnO thin films
Chan, Yun-Pei
Lin, Ja-Hon
Hsu, Chih-Chang
Hsieh, Wen-Feng
[J]. OPTICS EXPRESS, 2008, 16 (24): : 19900 - 19908

← 1 2 3 4 →