Effect of Structural Stress on the Laser Quality of Highly Doped Yb:KY(WO4)2/KY(WO4)2 and Yb:KLu(WO4)2/KLu(WO4)2 Epitaxial Structures

被引：9

作者：

Carvajal, J. J. ^{[1
]}

Raghothamachar, B. ^{[2
]}

Silvestre, O. ^{[1
]}

Chen, H. ^{[2
]}

Pujol, M. C. ^{[1
]}

Petrov, V. ^{[3
]}

Dudley, M. ^{[2
]}

Aguilo, M. ^{[1
]}

Diaz, F. ^{[1
]}

机构：

[1] Univ Rovira & Virgili, E-43007 Tarragona, Spain

[2] SUNY Stony Brook, Dept Mat Sci & Engn, Stony Brook, NY 11794 USA

[3] Max Born Inst Nonlinear Opt & Ultrafast Spect, D-12489 Berlin, Germany

来源：

CRYSTAL GROWTH & DESIGN | 2009年 / 9卷 / 02期

关键词：

CRYSTAL-GROWTH; THERMAL-EXPANSION; OPERATION; COMPOSITES; YTTERBIUM;

D O I：

10.1021/cg800835k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this communication we demonstrate how the difference in laser performance of two highly doped (20 at %) epitaxial layers of Yb-doped KY(WO4)(2) (KYW) grown on a KYW substrate and Yb-doped KLu(WO4)(2) (KLuW) grown on a KLuW substrate, respectively, is related to the presence of structural stress in the epilayers, investigated by synchrotron white beam X-ray topography. From the results obtained, it is clear that the samples that show a larger amount of structural stress, Yb:KYW/KYW epitaxies, lead to lower efficiency in laser operation, giving a direct correlation between the existence and magnitude of such structural stress and the loss in efficiency of laser performance in such epitaxial layers which, from a spectroscopical point of view, are otherwise equivalent.

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收藏

页码：653 / 656

页数：4

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