Asymmetry in the hysteresis loop of Pb(Zr0.53Ti0.47)O3/SiO2/Si structures

被引：25
作者：
Lin, Y
Zhao, BR
Peng, HB
Hao, Z
Xu, B
Zhao, ZX
Chen, JS
机构：
[1] Chinese Acad Sci, Inst Phys, Natl Lab Semiconductor, Beijing 100080, Peoples R China
[2] Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China
[3] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 08期
关键词：
D O I：
10.1063/1.371388
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The integrated ferroelectric/semiconductor systems, Pb(Zr0.53Ti0.47)O-3 (PZT)/SiO2/Si have been prepared and investigated. It was found that an asymmetry related to the conduction type of the substrate (Si) and the polarization direction of PZT exists in the polarization-voltage loops of the integrated system. According to the configuration and the characteristic of the integrated structure, we suggest that the space charge layer in Si and the tunneling process between Si and PZT during the polarization are the main causes for this asymmetry. (C) 1999 American Institute of Physics. [SS0021-8979(99)07420-4].
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页码：4467 / 4472
页数：6
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