Breakdown-quenching characteristics and mechanisms for silicon photomultipliers

被引：1

作者：

Zhang, Guoqing ^{[1
]}

Han, Dejun ^{[2
]}

Zhu, Changjun ^{[1
]}

Zhai, Xuejun ^{[1
]}

机构：

[1] Xian Polytech Univ, Sch Sci, Xian 710048, Peoples R China

[2] Beijing Normal Univ, Beijing Radiat Ctr, Minist Educ, Key Lab Beam Technol & Mat Modificat, Beijing 100875, Peoples R China

来源：

OPTIK | 2013年 / 124卷 / 22期

关键词：

Silicon photomultiplier; Multi-Pixel Photon Counter; Avalanche photo-diode; Single photon detector; Breakdown-quenching characteristics; DETECTOR;

D O I：

10.1016/j.ijleo.2013.04.023

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Some deviant breakdown-quenching characteristics of silicon photomultipliers are demonstrated and their physical mechanisms are explored. "Twice breakdown" phenomenon, "flat-topped" avalanche pulses and the determination method of the real breakdown voltage of the detector are analyzed. These characteristics are explained by the integration model in terms of avalanche threshold current based on the Haitz's equivalent circuit model. The reasoning results show that the maximum over-voltage for a normal operating silicon photomultiplier equals the product of the avalanche threshold current and the quenching resistor of the avalanche photo-diode (APD) pixel, approximately. Moreover, the model and results can be extended to other small avalanche junctions with quenching resistor. (C) 2013 Elsevier GmbH. All rights reserved.

引用

页码：5635 / 5638

页数：4

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