Effect of different total ionizing dose sources on charge loss from programmed floating gate cells

被引：31
作者：
Cellere, G [1 ]
Paccagnella, A
Visconti, A
Bonanomi, M
Candelori, A
Lora, S
机构：
[1] Univ Padua, DEI, I-35100 Padua, Italy
[2] STMicroelect, I-20024 Agrate Brianza, MI, Italy
[3] Ist Nazl Fis Nucl, I-35100 Padua, PD, Italy
[4] CNR, ISOF, I-35100 Padua, Italy
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2005年 / 52卷 / 06期
关键词：
floating gate (FG) memory arrays; gamma-rays; irradiation; protons; total ionizing dose (TID); X-rays;
D O I：
10.1109/TNS.2005.860681
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We irradiated programmed Floating Gate (FG) memory arrays with different radiation sources, including 10 keV X-rays, Co-60 gamma-rays, and 27 MeV protons. After irradiation, FGs experience a net charge loss which can degrade the stored information in terms of MOSFET threshold voltage. The charge loss is the result of two different phenomena: charge generation/recombination in the oxides and photoemission from the FG. The threshold voltage shift in irradiated devices depends on the radiation source: strong dose enhancement phenomena were found after X-ray irradiation, whereas proton results closely follow gamma-ray results.
引用
收藏
页码：2372 / 2377
页数：6
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