Modeling and design of GaAs traveling-wave electrooptic modulators based on capacitively loaded coplanar strips

被引：6
作者：
Cui, YS [1 ]
Berini, P [1 ]
机构：
[1] Univ Ottawa, Sch Informat Technol & Engn, Ottawa, ON K1N 6N5, Canada
来源：
JOURNAL OF LIGHTWAVE TECHNOLOGY | 2006年 / 24卷 / 01期
基金：
加拿大创新基金会;
关键词：
capacitively loaded coplanar strips; GaAs traveling-wave electrooptic modulator; slow-wave structure; velocity matched;
D O I：
10.1109/JLT.2005.859851
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaAs traveling-wave electrooptic (EO) modulators based on capacitively loaded coplanar strips (CPSs) have been extensively modeled, and near-optimal designs are presented. The modulator operates in a push-pull mode, and the electrodes are coupled capacitively in series via the doped under layer. The best design reported herein has asymmetric CPSs 2 cm long and generated a figure of merit of about 9.36 GHz/V This figure of merit is an improvement by a factor of about 2.5 over the best design reported to date for this modulator architecture. Modulator bandwidths in the range of 40-70 GHz (3 dB electrical) are predicted for various designs; the corresponding optical bandwidths are in the range of 75-110 GHz (3 dB optical).
引用
收藏
页码：544 / 554
页数：11
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