Material Engineering for Low Power Consumption and Multi-Level Storage in Lateral Phase-Change Memory

被引：0

作者：

Yin, You ^{[1
]}

Alip, Rosalena Irma ^{[1
]}

Zhang, Yulong ^{[1
]}

Hosaka, Sumio ^{[1
]}

机构：

[1] Gunma Univ, Grad Sch Engn, Kiryu, Gunma 3768515, Japan

来源：

MECHATRONICS AND INTELLIGENT MATERIALS II, PTS 1-6 | 2012年 / 490-495卷

关键词：

Phase-change memory; low power consumption; multi-level storage; RANDOM-ACCESS MEMORY; LOW RESET CURRENT; FILMS; CELL; GE2SB2TE5;

D O I：

10.4028/www.scientific.net/AMR.490-495.3286

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

The influence of the phase-change materials on the performance of memory devices for low power consumption and multi-level storage was investigated in this work. Doping N into chalcogenide phase-change materials resulted in higher resistivity and low-response to the temperature. The former characteristic leaded to high heating efficiency for phase change via self-heating and thus reduced the power consumption to about 1/20. The latter characteristic enabled easy control of phase change process in the memory device for multi-level storage. 16 distinct resistance levels were demonstrated in our lateral device by adopting a top heater structure.

引用

收藏

页码：3286 / 3290

页数：5

相关论文

共 19 条

[1] Nanosecond switching in GeTe phase change memory cells [J].

Bruns, G. ;

Merkelbach, P. ;

Schlockermann, C. ;

Salinga, M. ;

Wuttig, M. ;

Happ, T. D. ;

Philipp, J. B. ;

Kund, M. .

APPLIED PHYSICS LETTERS, 2009, 95 (04)

[2]

CHEN YC, 2006, IEDM, P777

[3] Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements [J].

Friedrich, I ;

Weidenhof, V ;

Njoroge, W ;

Franz, P ;

Wuttig, M .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :4130-4134

[4] One-dimensional heat conduction model for an electrical phase change random access memory device with an 8F2 memory cell (F=0.15 μm) [J].

Kang, DH ;

Ahn, DH ;

Kim, KB ;

Webb, JF ;

Yi, KW .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (05) :3536-3542

[5]

Lai S, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P255

[6] Submicron nonvolatile memory cell based on reversible phase transition in chalcogenide glasses [J].

Nakayama, K ;

Kojima, K ;

Hayakawa, F ;

Imai, Y ;

Kitagawa, A ;

Suzuki, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (11) :6157-6161

[7] AMORPHOUS SEMICONDUCTORS FOR SWITCHING, MEMORY, AND IMAGING APPLICATIONS [J].

OVSHINSK.SR ;

FRITZSCH.H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (02) :91-105

[8] Multilevel data storage characteristics of phase change memory cell with douhlelayer chalcogenide films (Ge2Sh2Te5 and Sb2Te3) [J].

Rao, Feng ;

Song, Zhitang ;

Zhong, Min ;

Wu, Liangcai ;

Feng, Gaoming ;

Liu, Bo ;

Feng, Songlin ;

Chen, Bomy .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (1-3) :L25-L27

[9] Quantized conductance atomic switch [J].

Terabe, K ;

Hasegawa, T ;

Nakayama, T ;

Aono, M .

NATURE, 2005, 433 (7021) :47-50

[10] Dependences of electrical properties of thin GeSbTe and AgInSbTe films on annealing [J].

Yin, Y ;

Sone, H ;

Hosaka, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (08) :6208-6212