Surface preparation of 4° off-axis 4H-SIC substrate for epitaxial growth

被引：12

作者：

Li, Xun ^{[1
]}

ul Hassan, Jawad ^{[1
]}

Kordina, Olof ^{[1
]}

Janzen, Erik ^{[1
]}

Henry, Anne ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷

关键词：

Surface preparation; 4H-SiC substrates; CVD; CVD GROWTH; SITU; SILICON; HCL;

D O I：

10.4028/www.scientific.net/MSF.740-742.225

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Results of surface preparation on Si-face 4 degrees off-cut 4H-SiC substrates are presented in this paper. The influences of two types of etchants, i.e. hydrogen chloride (HCl) and only hydrogen (H-2), were investigated by Nomarski microscopy and AFM. The experiments were performed in a hot wall CVD reactor using a TaC coated susceptor. Four etching temperatures, including 1580 degrees C, 1600 degrees C, 1620 degrees C and 1640 degrees C, were studied. In-situ etching with only H-2 as ambient atmosphere is found to be the optimal way for the SiC surface preparation. Using HCl at temperature higher than 1620 degrees C could degrade the substrates surface quality.

引用

页码：225 / 228

页数：4

共 9 条

[1] The role of excess silicon and in situ etching on 4H-SiC and 6H-SiC epitaxial layer morphology [J].

Burk, AA ;

Rowland, LB .

JOURNAL OF CRYSTAL GROWTH, 1996, 167 (3-4) :586-595

[2] In situ substrate preparation for high-quality SiC chemical vapour deposition [J].

Hallin, C ;

Owman, F ;

Martensson, P ;

Ellison, A ;

Konstantinov, A ;

Kordina, O ;

Janzen, E .

JOURNAL OF CRYSTAL GROWTH, 1997, 181 (03) :241-253

[3] In-situ surface preparation of nominally on-axis 4H-SiC substrates [J].

Hassan, J. ;

Bergman, J. P. ;

Henry, A. ;

Janzen, E. .

JOURNAL OF CRYSTAL GROWTH, 2008, 310 (20) :4430-4437

[4] Growth of smooth 4H-SiC epilayers on 4° off-axis substrates with chloride-based CVD at very high growth rate [J].

Leone, S. ;

Beyer, F. C. ;

Pedersen, H. ;

Kordina, O. ;

Henry, A. ;

Janzen, E. .

MATERIALS RESEARCH BULLETIN, 2011, 46 (08) :1272-1275

[5] Gaseous etching effects on homoepitaxial growth of SiC on hemispherical substrates using CVD [J].

Nishino, S ;

Masuda, Y ;

Ohshima, S ;

Jacob, C .

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 :123-126

[6] Effect of Substrates Thermal Etching on CVD Growth of Epitaxial Silicon Carbide Layers [J].

Strupinski, Wlodek ;

Kosciewicz, Kinga ;

Weyher, Jan ;

Olszyna, Andrzej .

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 :155-+

[7] HCl Etching Behavior on Low-Tilt-Angle and Step-Free 4H-SiC Surfaces [J].

Trunek, A. J. ;

Powell, J. A. ;

Neudeck, P. G. ;

Mrdenovich, M. .

SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 :593-596

[8] In situ etching of 4H-SiC in H2 with addition of HCl for epitaxial CVD growth [J].

Zhang, J ;

Kordina, O ;

Ellison, A ;

Janzén, E .

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 :239-242

[9]

ZHOU L, 1997, J ELECTROCHEM SOC, V144, P161

← 1 →