Perpendicular exchange bias effect in sputter-deposited CoFe/IrMn bilayers

被引：33

作者：

Chen, J. Y. ^{[1
]}

Thiyagarajah, Naganivetha

Xu, H. J.

Coey, J. M. D.

机构：

[1] Univ Dublin Trinity Coll, Sch Phys, Dublin 2, Ireland

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 15期

基金：

爱尔兰科学基金会;

关键词：

MAGNETIC-ANISOTROPY; TEMPERATURE; MULTILAYER; MODEL;

D O I：

10.1063/1.4871711

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CoFe/IrMn bilayers with perpendicular magnetization for various IrMn layer thicknesses exhibit unusual two-step hysteresis loops with both positive and negative loop shifts. Observed at room temperature in the as-grown state, they provide direct evidence of large antiferromagnetic domain formation at the IrMn interface. The exchange bias field reaches 100mT with an IrMn layer thickness of 4 nm after field annealing at 200 degrees C-300 degrees C in 800 mT, which is at least three times as large as the coercivity, and may be useful for reference layers of spin-valves or magnetic tunnel junctions with perpendicular magnetic anisotropy. (C) 2014 AIP Publishing LLC.

引用

页数：5

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