A Crystalline Metallic Copper Network Application Film Produced by High-Temperature Atmospheric Sintering

被引：9

作者：

Kato, Takahiko ^{[1
,2
]}

Adachi, Shuichiro ^{[3
]}

Aoyagi, Takuya ^{[1
]}

Naito, Takashi ^{[1
]}

Yamamoto, Hiroki ^{[1
]}

Nojiri, Takeshi ^{[3
]}

Yoshida, Masato ^{[3
]}

机构：

[1] Hitachi Ltd, Hitachi Res Lab, Ibaraki 3191292, Japan

[2] Hokkaido Univ, Sapporo, Hokkaido 0608628, Japan

[3] Hitachi Chem Co Ltd, Tsukuba Res Lab, Tsukuba, Ibaraki 3004247, Japan

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2012年 / 2卷 / 04期

关键词：

Atmospheric sintering; copper-phosphorus (Cu-P) alloy paste; crystalline metallic copper application film; crystalline silicon (Si) photovoltaic (PVs) contacts; SILICON; PASSIVATION;

D O I：

10.1109/JPHOTOV.2012.2188018

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We show the first production of a copper (Cu) application film (AF) consisting of a novel network of crystalline metallic Cu embedded with copper-phosphorus-oxygen glasses (Cu-2(PO4) and Cu2P2O7) to provide new feedstock materials for crystalline silicon (Si) photovoltaics (PVs). The Cu crystal network was preferentially grown in AF, and thus, a Cu AF with low-electrical resistivity was formed in air at elevated temperatures of >= 450 degrees C by using a copper-phosphorus (Cu-P) alloy paste as a starting material for the sintering. The Cu-P alloy had the role that governed deoxidization of a cuprous oxide, which was formed on heating during the sintering, by virtue of a concurrent oxidation of the Cu phosphide at elevated temperatures. Our results may open the way to the widespread use of atmospherically sintered Cu AFs for mass-production of next-generation crystalline Si PVs.

引用

页码：499 / 505

页数：7

共 22 条

[1] Overview on SiN surface passivation of crystalline silicon solar cells [J].

Aberle, AG .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 65 (1-4) :239-248

[2] Nature of the Ag-Si interface in screen-printed contacts: A detailed transmission electron microscopy study of cross-sectional structures [J].

Ballif, C ;

Huljic, DM ;

Hessler-Wyser, A ;

Willeke, G .

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002, 2002, :360-363

[3] Silver thick-film contacts on highly doped n-type silicon emitters:: Structural and electronic properties of the interface [J].

Ballif, C ;

Huljic, DM ;

Willeke, G ;

Hessler-Wyser, A .

APPLIED PHYSICS LETTERS, 2003, 82 (12) :1878-1880

[4] THE OXIDATION OF METALS [J].

CAMPBELL, WE ;

THOMAS, UB .

TRANSACTIONS OF THE ELECTROCHEMICAL SOCIETY, 1947, 91 :623-640

[5]

Dube C. E., 1990, Conference Record of the Twenty First IEEE Photovoltaic Specialists Conference - 1990 (Cat. No.90CH2838-1), P624, DOI 10.1109/PVSC.1990.111695

[6] Defect passivation of industrial multicrystalline solar cells based on PECVD silicon nitride [J].

Duerinckx, F ;

Szlufcik, J .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2002, 72 (1-4) :231-246

[7]

Ellingham H. J. T., 1944, Chem. Ind, V63, P125, DOI [10.1002/jctb.5000630501, DOI 10.1002/JCTB.5000630501]

[8]

Haigh A. D., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P360

[9]

Hilali M., 2004, 14th Workshop on Crystalline Silicon Solar Cells and Modules, P1

[10]

Kikukawa M., 2000, Journal of the Japan Society of Powder and Powder Metallurgy, V47, P453, DOI DOI 10.2497/JJSPM

← 1 2 3 →