Growth temperature dependences of InN films grown by MOCVD

被引：20

作者：

Yang, Cuibai ^{[1
]}

Wang, Xiaoliang ^{[1
,2
]}

Xiao, Hongling ^{[1
]}

Zhang, Xiaobin ^{[1
]}

Hua, Guoxin ^{[1
]}

Ran, Junxue ^{[1
]}

Wang, Cuimei ^{[1
]}

Li, Jianping ^{[1
]}

Li, Jinmin ^{[1
]}

Wang, Zhanguo ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2008年 / 255卷 / 05期

关键词：

InN; MOCVD; Mobility;

D O I：

10.1016/j.apsusc.2008.09.013

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We investigate the growth temperature dependences of InN films grown by metal organic chemical vapor deposition (MOCVD). Experimental results indicate that growth temperature has a strong effect on the surface morphology, crystalline quality and electrical properties of the InN layer. The increasing growth temperature broadened the v scan's full-width at half-maximum (FWHM) and roughened the surface morphology; whereas the electrical properties improved: As the temperature increased from 460 degrees C to 560 degrees C, room-temperature Hall mobility increased from 98 cm(2)/V s to nearly 800 cm(2)/V s and carrier concentration dropped from 5.29 x 10(19) cm (3) to 0.93 x 10(19) cm (3). The higher growth temperature resulted in more efficient cracking of NH(3), which improved Hall mobility and decreased carrier concentration. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：3149 / 3152

页数：4

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