Electronic properties of a perylene bisimide interfaced with gold or aluminum: The influence of the substrate

被引：5

作者：

Emmanouil, Konstantinos ^{[1
]}

Gawrys, Pawel ^{[2
]}

Zagorska, Malgorzata ^{[2
]}

Kennou, Stella ^{[1
]}

机构：

[1] Univ Patras, Dept Chem Engn, Patras 26504, Greece

[2] Warsaw Univ Technol, Fac Chem, PL-00664 Warsaw, Poland

来源：

MICROELECTRONIC ENGINEERING | 2013年 / 112卷

关键词：

Organic semiconductors; Perylene bisimide; Al; Au; HOMO; Photoelectron spectroscopy; ENERGY-LEVEL ALIGNMENT; PHOTOELECTRON-SPECTROSCOPY; X-RAY; PHOTOEMISSION;

D O I：

10.1016/j.mee.2013.03.128

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The interfaces between perylene bisimide with 4-t-butylphenyl N-substituents (an organic semiconductor) and gold or aluminum were studied by Ultraviolet and X-ray photoelectron spectroscopies (UPS and XPS). Neither of the substrates reacts with the organic semiconductor. An interfacial dipole of 0.5 eV is found at the interface with gold, whereas with aluminum a vacuum level alignment is observed. The onset of the highest occupied molecular orbital (HOMO) was determined at 2.3 eV below the Fermi level. An electron injection barrier of 0.6 eV was found for aluminum and 0.9 eV for gold, which indicates that the interface with aluminum seems more promising for organic field effect applications. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：170 / 173

页数：4

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