共 37 条
Hydrogen-Incorporated TiS2 Ultrathin Nanosheets with Ultrahigh Conductivity for Stamp-Transferrable Electrodes
被引:282
作者:

Lin, Chenwen
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Univ Sci & Technol China, Div Nanomat & Nanochem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China Univ Sci & Technol China, Div Nanomat & Nanochem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China

Zhu, Xiaojiao
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Univ Sci & Technol China, Div Nanomat & Nanochem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China Univ Sci & Technol China, Div Nanomat & Nanochem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China

Feng, Jun
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Univ Sci & Technol China, Div Nanomat & Nanochem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China Univ Sci & Technol China, Div Nanomat & Nanochem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China

Wu, Changzheng
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Univ Sci & Technol China, Div Nanomat & Nanochem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China Univ Sci & Technol China, Div Nanomat & Nanochem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China

Hu, Shuanglin
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机构:
Uppsala Univ, Angstrom Lab, Dept Chem Mat, S-75121 Uppsala, Sweden Univ Sci & Technol China, Div Nanomat & Nanochem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China

Peng, Jing
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Univ Sci & Technol China, Div Nanomat & Nanochem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China Univ Sci & Technol China, Div Nanomat & Nanochem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China

Guo, Yuqiao
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Univ Sci & Technol China, Div Nanomat & Nanochem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China Univ Sci & Technol China, Div Nanomat & Nanochem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China

Peng, Lele
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Univ Sci & Technol China, Div Nanomat & Nanochem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China Univ Sci & Technol China, Div Nanomat & Nanochem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China

Zhao, Jiyin
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Univ Sci & Technol China, Div Nanomat & Nanochem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China Univ Sci & Technol China, Div Nanomat & Nanochem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China

Huang, Jianliu
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Univ Sci & Technol China, Div Nanomat & Nanochem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China Univ Sci & Technol China, Div Nanomat & Nanochem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China

Yang, Jinlong
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Univ Sci & Technol China, Div Nanomat & Nanochem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China Univ Sci & Technol China, Div Nanomat & Nanochem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China

Xie, Yi
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Univ Sci & Technol China, Div Nanomat & Nanochem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China Univ Sci & Technol China, Div Nanomat & Nanochem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China
机构:
[1] Univ Sci & Technol China, Div Nanomat & Nanochem, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China
[2] Uppsala Univ, Angstrom Lab, Dept Chem Mat, S-75121 Uppsala, Sweden
基金:
中国国家自然科学基金;
关键词:
REDUCED GRAPHENE OXIDE;
FILMS;
TRANSPARENT;
SHEETS;
FABRICATION;
PHASE;
THICK;
D O I:
10.1021/ja400041f
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
As a conceptually new class of two-dimensional (2D) materials, the ultrathin nanosheets as inorganic graphene analogues (IGAs) play an increasingly vital role in the new-generation electronics. However, the relatively low electrical conductivity of inorganic ultrathin nanosheets in current stage significantly hampered their conducting electrode applications in constructing nanodevices. We developed the unprecedentedly high electrical conductivity in inorganic ultrathin nanosheets. The hydric titanium disulfide (HTS) ultrathin nanosheets, as a new IGAs, exhibit the exclusively high electrical conductivity of 6.76 x 10(4) S/m at room temperature, which is superior to indium tin oxide (1.9 x 10(4) S/m), recording the best value in the solution assembled 2D thin films of both graphene (5.5 x 10(4) S/m) and inorganic graphene analogues (5.0 x 10(2) S/m). The modified hydrogen on S-Ti-S layers contributes additional electrons to the TiS2 layered frameworks, rendering the controllable electrical conductivity as well as the electron concentrations. Together with synergic advantages of the excellent mechanical flexibility, high stability, and stamp-transferrable properties, the HTS thin films show promising capability for being the next generation conducting electrode material in the nanodevice fields.
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收藏
页码:5144 / 5151
页数:8
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