Fabrication, characterization, and application in nanoenergetic materials of uncracked nano porous silicon thick films

被引:9
作者
Wang, Shouxu [1 ]
Shen, Ruiqi [1 ]
Yang, Cheng [1 ]
Ye, Yinghua [1 ]
Hu, Yan [1 ]
Li, Chuangxin [1 ,2 ]
机构
[1] Nanjing Univ Sci & Technol, Sch Chem Engn, Nanjing 210094, Jiangsu, Peoples R China
[2] Wuhan Ordnance NCO Acad PLA, Wuhan 430075, Peoples R China
关键词
Porous silicon; Fabrication; Nanostructure; Nanopores; nEMs; LIGHT-EMITTING-DIODES; SOLAR-CELLS; PHOTOLUMINESCENCE; MECHANISMS; SUBSTRATE; MEMBRANES; DEVICES; GAS;
D O I
10.1016/j.apsusc.2012.09.148
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The porous silicon (PS) film has gained increasing attention in recent years as advanced nanoenergetic materials (nEMs). A simple fabrication method to prepare uncracked PS thick films was successfully realized with precisely controlled electrochemical etching, and the relationship between the current density and the concentration of electrolytes was found in its fabrication. Additionally, the capillary stresses resulted from the liquids in nanopores of PS films was another factor resulted in its crack. The nanopores composed of uncracked PS thick films distributed regularly and their diameters ranged from 2 nm to 6 nm. Its S-a (average roughness) of PS film surface was 6.53 nm, and its thickness ranged from 102.41 mu m to 205.75 mu m. The specific surface area was 587 m(2)/g and the average diameter of nanopores was 4.3 nm. The PS film was found to be monocrystal and it was same as the substrate. The crack mechanism of PS films was discussed: the porous structure reduced the strength of PS films comparing the silicon bulk and the capillary effect hastened the crack of PS films. PS films filling with sodium percholorate in nanopores were ignited by laser and the stable combustion showed that they were advantageous to be applied as micro-electromechanical systems (MEMS) compatible devices, such as silicon-based chips of mircothruster and microigniter. Crown Copyright (C) 2012 Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:4 / 9
页数:6
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